mt28f008b3vg-9-tet Micron Semiconductor Products, mt28f008b3vg-9-tet Datasheet - Page 30
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mt28f008b3vg-9-tet
Manufacturer Part Number
mt28f008b3vg-9-tet
Description
8mb Smart 3 Boot Block Flash Memory
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT28F008B3VG-9-TET.pdf
(30 pages)
Revision History
09005aef81136a91
Q10.fm - Rev. E 6/04 EN
Rev. E, Pub.6/04. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6/04
• Update to I
• 40-pin TSOP and 48-pin TSOP package drawings have been updated
Rev. D, Pub.3/04 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3/04
• Added lead-free packaging options
Rev. 3, Pub. 10/01 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10/01
• Updated input capacitance spec
• Changed access time to 90ns
Rev. 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3/01
• Changed to 0.18µm process
• 12V V
• 10V
• V
•
•
• AC test output load CL changed to 50pF
• Typical main BLOCK ERASE time changed to 1.5s from 1s
• Typical main BLOCK WRITE time (byte mode) changed to 1s from 0.5s
• Typical main BLOCK WRITE time (word mode) changed to 1s from 0.5s
• MT28F800B3 only available in WG and SG packages
• MT28F008B3 only available in VG package
• Added 80ns access time for commercial and extended temperature ranges
t
t
RWH changed to 1µs from 800ns
AH changed to 10ns from 0ns
OH
≤
≤
PP
V
V
HH
CC
no longer supported
- 0.2V
≤
CC
12V
6 value
SMART 3 BOOT BLOCK FLASH MEMORY
30
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001 Micron Technology, Inc. All rights reserved.
8Mb