hyb18tc256160af-3.7 Infineon Technologies Corporation, hyb18tc256160af-3.7 Datasheet - Page 65

• Manufacturer Part Number: hyb18tc256160af-3.7
• Description: Consumer Dram Ddr2
• Manufacturer: Infineon Technologies Corporation

Figure 52
Note: Active Power-Down mode exit timing t
RL = 4 (AL = 1, CL =3), BL = 4
Figure 53
WL = 2,
Note: Active Power-Down mode exit timing
Data Sheet
D Q S ,
D Q S
C K E
C K , C K
C M D
D Q
state in the MR, address bit A12.
state in the MR, address bit A12.
R E A D w /A P
T0
t
C K , C K
C K E
R E A D
C M D
WTR
AL = 1
Active Power-Down Mode Entry and Exit Example after a Read Command
Active Power-Down Mode Entry and Exit Example after a Write Command
= 2, BL = 4
P re ch a rg e
T0
T1
*)
N O P
CL = 3
RL = 4
Power-Down
Precharge
Entry
T1
T2
N O P
N O P
tRP
RL + BL/2
T3
N O P
T2
N O P
T4
t
N O P
XARD
XARD
Dout A0
T3
N O P
tIS
Dout A1
(“fast exit”) or t
(“fast exit”) or
T5
N O P
Dout A2
65
N O P
Dout A3
T6
Power-Down
N O P
Precharge
t
XARDS
Tn
Exit
XARDS
Power-Down
N O P
tIS
Active
Entry
T7
(“slow exit”) depends on the programmed
(“slow exit”) depends on the programmed
N O P
tIS
Tn+1
tXP
N O P
HYB18TC256160AF–[3S/3.7]
T8
N O P
Power-Down
Tn+2
256-Mbit DDR2 SDRAM
C om m a nd
Active
V a lid
Exit
Tn
N O P
tIS
Functional Description
07212005-A7MT-J7NM
tXARD or
tXARDS *)
Tn+1
N O P
Rev. 1.0, 2005-07
N O P
Tn+2
C o m m an d
V a lid
Act.PD 1