lh28f004su-nc Sharp Microelectronics of the Americas, lh28f004su-nc Datasheet - Page 27

• Manufacturer Part Number: lh28f004su-nc
• Description: 512k Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

4M (512K × 8) Flash Memory
AC Characteristics for CE
NOTES:
1. Read timing during write and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Write/Erase durations are measured to valid Status Register (CSR) Data.
5. Byte Write operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of CE
SYMBOL
t
t
t
V
t
t
t
t
t
t
t
t
t
t
t
t
t
EHQV
EHQV
t
t
t
EHWH
PHWL
DVEH
EHDX
AVAV
VPEH
WLEL
AVEH
ELEH
EHAX
EHEL
GHEL
EHRL
RHPL
PHEL
EHGL
QVVL
CC
= 5.0 V ± 0.5 V, T
1
2
Write Cycle Time
RP
V
WE Setup to CE
Address Setup to CE
Data Setup to CE
CE
Data Hold from CE
Address Hold from CE
WE Hold from CE
CE
Read Recovery before Write
CE
RP
Data and RY
RP
Write Recovery before Read
V
Data and RY
Duration of Byte Write Operation
Duration of Block Erase Operation
PP
PP
»
»
»
»
»
»
Setup to WE Going Low
Pulse Width
Pulse Width High
High to RY
Hold from Valid Status Register
High Recovery to CE
Set up to CE
Hold from Valid Status Register
A
PARAMETER
»
/ BY
»
/ BY
= 0°C to +70°C
»
/ BY
»
»
»
Going Low
High
High
»
»
»
Going High
Going High
High
»
»
High
Going Low
»
»
Going High
»
- Controlled Command Write Operations
High
»
Going Low
»
for all Command Write Operations.
TYP.
13
MIN.
480
100
0.3
4.5
80
65
65
65
10
10
30
65
0
0
0
1
0
0
MAX.
100
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
µs
s
1
NOTE
2, 6
2, 6
4, 5
3
3
2
2
3
4
LH28F004SU-NC
27