lh28f008sc Sharp Microelectronics of the Americas, lh28f008sc Datasheet - Page 28

• Manufacturer Part Number: lh28f008sc
• Description: 8m 1m ? 8 Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

LH28F008SC
AC CHARACTERISTICS - Write Operations
NOTES:
1. Read timing characteristics during block erase, byte write and lock-bit configuration operations are
2. Sampled, not 100% tested.
3. Refer to Command Definitions Table for valid A
4. V
5. See Ordering Information for device speeds (valid operational combinations).
6. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Seed Configuration)
7. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard Configuration)
28
SYMBOL
t
V
t
t
the same as during read-only operations. Refer to AC Characteristics for read-only operations.
byte write, or lock-bit configuration success (SR.1/3/4/5 = 0).
for testing characteristics.
for testing characters.
PHHWH
t
t
t
t
t
t
t
t
t
t
t
t
t
WLWH
WHWL
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHGL
PHWL
WHRL
QVPH
AVAV
ELWL
QVVL
PP
CC
should be held at V
= 5 V ± 0.5 V, 5 V ± 0.25 V, T
Write Cycle Time
RP
Going Low
CE
WE Pulse Width
RP
Going High
V
Going High
Address Setup to WE
Going High
Data Setup to WE
Going High
Data Hold from WE High
Address Hold from
WE High
CE
WE Pulse Width High
WE High to RY
Low
Write Recovery before
Read
V
RY
RP
SRD, RY
PP
PP
»
»
»
»
»
/ BY
»
Setup to WE Going Low
High Recovery to WE
V
Hold from WE High
V
Setup to WE
Hold from Valid SRD,
HH
HH
PARAMETER
»
High
Hold from Valid
Setup to WE
»
/ BY
PPH1/2/3
»
High
»
/ BY
(and if necessary RP
»
Going
A
= 0°C to +70°C
LH28F008SC-85
IN
MIN.
100
100
85
40
40
40
10
30
10
and D
1
5
0
0
0
5
»
should be held at V
IN
for block erase, byte write, or lock-bit configuration.
MAX.
90
1
6
LH28F008SC-90
MIN.
100
100
40
40
90
10
40
10
30
1
5
5
0
0
0
HH
) until determination of block erase,
MAX.
90
7
LH28F008SC-120
MIN.
8M (1M × 8) Flash Memory
MAX.
120
100
100
10
40
40
40
10
30
1
5
5
0
0
0
8
UNIT
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE
2, 4
2, 4
2
2
2
3
3