cy62157ev30 Cypress Semiconductor Corporation., cy62157ev30 Datasheet - Page 6

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cy62157ev30

Manufacturer Part Number
cy62157ev30
Description
8-mbit 512k X 16 Static Ram
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

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Document #: 38-05445 Rev. *E
Switching Characteristics
Over the Operating Range
Notes
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
t
13. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less, timing reference levels of V
14. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See
15. At any temperature and voltage condition, t
16. t
17. If both byte enables are toggled together, this value is 10 ns.
18. The internal write time of the memory is defined by the overlap of WE, CE = V
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
DBE
LZBE
HZBE
WC
SCE
AW
HA
SA
PWE
BW
SD
HD
HZWE
LZWE
levels of 0 to V
write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that
terminates the write.
HZOE
Parameter
, t
HZCE
[18]
, t
HZBE
CC(typ)
, and t
, and output loading of the specified I
HZWE
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE
OE LOW to Data Valid
OE LOW to LOW-Z
OE HIGH to High-Z
CE
CE
CE
CE
BLE/BHE LOW to Data Valid
BLE/BHE LOW to Low-Z
BLE/BHE HIGH to HIGH-Z
Write Cycle Time
CE
Address Setup to Write End
Address Hold from Write End
Address Setup to Write Start
WE Pulse Width
BLE/BHE LOW to Write End
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z
WE HIGH to Low-Z
[13, 14]
transitions are measured when the outputs enter a high-impedance state.
1
1
1
1
1
1
LOW and CE
LOW and CE
HIGH and CE
LOW and CE
HIGH and CE
LOW and CE
HZCE
is less than t
2
2
2
2
2
2
[15]
[15, 16]
[15]
HIGH to Data Valid
[15, 16]
HIGH to Low-Z
HIGH to Power Up
HIGH to Write End
LOW to High-Z
LOW to Power Down
Description
OL
[15, 17]
/I
LZCE
OH
[15, 16]
as shown in the
, t
HZBE
[15]
is less than t
[15, 16]
IL
, BHE, BLE or both = V
“AC Test Loads and Waveforms” on page
LZBE
, t
HZOE
is less than t
IL
, and CE
LZOE
45 ns (Ind’l/Auto-A)
application note AN13842
CY62157EV30 MoBL
Min
45
10
35
25
10
45
35
35
35
10
5
0
5
0
0
0
2
, and t
= V
IH
HZWE
. All signals must be active to initiate a
5.
is less than t
Max
45
45
22
18
18
45
45
18
18
for further clarification.
CC(typ)
LZWE
Page 6 of 14
for any device.
/2, input pulse
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
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