cy62157ev30 Cypress Semiconductor Corporation., cy62157ev30 Datasheet - Page 14

• Manufacturer Part Number: cy62157ev30
• Description: 8-mbit 512k X 16 Static Ram
• Manufacturer: Cypress Semiconductor Corporation.

Document #: 38-05445 Rev. *E
Document History Page
Document Title: CY62157EV30 MoBL
Document Number: 38-05445
REV.
*A
*B
*C
*D
*E
**
ECN NO. Issue Date
1045801
202940
291272
444306
467052
925501
See ECN
See ECN
See ECN
See ECN
See ECN
See ECN
Change
Orig. of
®
NXR
NXR
VKN
SYT
VKN
AJU
, 8-Mbit (512K x 16) Static RAM
Removed Automotive-E information
New Data Sheet
Converted from Advance Information to Preliminary
Removed 48-TSOP I Package and the associated footnote
Added footnote stating 44 TSOP II Package has only one CE on Page # 2
Changed V
Changed I
Changed t
Changed t
Changed t
and 45 ns Speed Bins respectively
Changed t
Bins respectively
Changed t
Speed Bins respectively
Changed t
respectively
Added Lead-Free Package Information
Converted from Preliminary to Final.
Changed ball E3 from DNU to NC
Removed redundant footnote on DNU.
Removed 35 ns speed bin
Removed “L” bin
Added 48 pin TSOP I package
Added Automotive product information.
Changed the I
mA to 25 mA for test condition f = fax = 1/t
Changed the I
Changed the I
0.9 µA to 2 µA respectively.
Modified ISB
Updated Thermal Resistance table.
Changed Test Load Capacitance from 50 pF to 30 pF.
Added Typ value for I
Changed the I
Corrected t
Changed t
Changed t
Changed t
Changed t
Changed t
Changed t
Changed t
Added footnote #15
Updated the ordering Information and replaced the Package Name column
with Package Diagram.
Modified Data sheet to include x8 configurability.
Updated the Ordering Information table
Added Preliminary Automotive-A information
Added footnote #10 related to I
Added footnote #15 related AC timing parameters
Converted Automotive-A specs from preliminary to final
Updated footnote #9
Description of Change
CCDR
OHA
DOE
HZOE
HZCE
SCE
SD
LZOE
LZCE
HZCE
LZBE
PWE
SD
LZWE
CC
R
1
in Data Retention Characteristics from 100 µs to t
from 15 and 20 ns to 18 and 22 ns for 35 and 45 ns Speed Bins
from 22 to 25
, t
CC
CC
SB1
CCDR
stabilization time in footnote #7 from 100 µs to 200 µs
test condition to include BHE, BLE
from 6 to 10 ns for both 35 and 45 ns Speed Bins
from 15 to 18 ns for 35 ns Speed Bin
from 30 to 35
, t
AW
from 6 to 10
from 6 to 5
from 3 to 5
from 12 and 15 ns to 18 and 22 ns for 35 and 45 ns Speed
from 22 to 18
from 6 to 10
from 4 to 4.5 µA
Typ value from 16 mA to 18 mA and I
Max value from 2.3 mA to 3 mA for test condition f = 1MHz.
HZBE
and I
and t
Max value from 4.5 µA to 5 µA
CCDR .
SB2
and t
BW
Max value from 4.5 µA to 8 µA and Typ value from
from 25 and 40 ns to 30 and 35 ns for 35 and 45 ns
HZWE
SB2
from 12 and 15 ns to 15 and 18 ns for 35
and I
CY62157EV30 MoBL
CCDR
RC.
CC
Max value from 28
Page 14 of 14
RC
ns.
®
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