cy62148e Cypress Semiconductor Corporation., cy62148e Datasheet - Page 4

• Manufacturer Part Number: cy62148e
• Description: 4-mbit 512k X 8 Static Ram
• Manufacturer: Cypress Semiconductor Corporation.

Thermal Resistance
AC Test Loads and Waveforms
Data Retention Characteristics
Data Retention Waveform
Note
Document #: 38-05442 Rev. *F
V
I
t
t
11. Full device operation requires linear V
CCDR
CDR
R
Parameter
DR
[11]
Parameter
[10]
Θ
Θ
OUTPUT
JA
JC
INCLUDING
V
CE
CC
V
JIG AND
CC
SCOPE
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Parameters
CC
30 pF
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
for Data Retention
R
V
R1
R2
TH
TH
R1
Description
Description
[10]
CC
R2
ramp from V
Equivalent to:
(Over the Operating Range)
V
CC(min)
t
CDR
DR
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
OUTPUT
to V
CC(min)
Rise Time = 1 V/ns
V
V
CC
IN
THEVENIN
= V
> V
> 100 µs or stable at V
3.0V
DATA RETENTION MODE
Test Conditions
DR
CC
GND
1800
5.0V
1.77
990
639
, CE > V
– 0.2V or V
EQUIVALENT
R
V
TH
DR
Conditions
10%
CC
> 2.0V
– 0.2V,
CC(min)
ALL INPUT PULSES
IN
V
< 0.2V
90%
> 100 µs.
Ind’l/Auto-A
Package
SOIC
V
75
10
CC(min)
CY62148E MoBL
90%
t
R
10%
Min
t
RC
2
0
Fall Time = 1 V/ns
Unit
Package
TSOP II
Ω
Ω
Ω
V
Typ
77
13
1
[3]
Page 4 of 10
Max Unit
7
°C/W
°C/W
Unit
µA
ns
ns
V
®
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