bgd906mi NXP Semiconductors, bgd906mi Datasheet - Page 2
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bgd906mi
Manufacturer Part Number
bgd906mi
Description
Catv Amplifier Modules
Manufacturer
NXP Semiconductors
Datasheet
1.BGD906MI.pdf
(12 pages)
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Hybrid amplifier modules in a SOT115J package operating
with a voltage supply of 24 V (DC). Both modules are
electrically identical, only the pinning is different.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Nov 01
G
I
V
V
T
T
tot
SYMBOL
SYMBOL
stg
mb
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
CATV systems operating in the 40 to 900 MHz
frequency range.
B
i
860 MHz, 21.5 dB gain power doubler amplifier
p
power gain
total current consumption (DC)
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
PARAMETER
f = 50 MHz
f = 900 MHz
V
B
= 24 V; T
2
PINNING - SOT115J
handbook, halfpage
CONDITIONS
PIN
2, 3
7, 8
mb
1
5
9
= 35 C
Fig.1 Simplified outline SOT115J.
Side view
input
common
+V
common
output
B
BGD906
1
BGD906; BGD906MI
2
21.2
22
405
3
40
20
MIN.
MIN.
5
DESCRIPTION
7
8
9
Product specification
21.8
23
435
30
70
+100
+100
MSA319
output
common
+V
common
input
MAX.
MAX.
B
BGD906MI
dB
dB
mA
V
dBmV
C
C
UNIT
UNIT