BGD906,112 NXP Semiconductors, BGD906,112 Datasheet
BGD906,112
Specifications of BGD906,112
BGD906
BGD906
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BGD906,112 Summary of contents
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DATA SHEET dbook, halfpage BGD906; BGD906MI 860 MHz, 21.5 dB gain power doubler amplifier Product specification Supersedes data of 2000 Mar 28 DISCRETE SEMICONDUCTORS M3D252 2001 Nov 01 ...
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... NXP Semiconductors 860 MHz, 21.5 dB gain power doubler amplifier FEATURES • Excellent linearity • Extremely low noise • Excellent return loss properties • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CATV systems operating in the 40 to 900 MHz frequency range ...
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... NXP Semiconductors 860 MHz, 21.5 dB gain power doubler amplifier CHARACTERISTICS Bandwidth 40 to 900 MHz SYMBOL PARAMETER G power gain p SL slope straight line FL flatness straight line s input return losses 11 s output return losses 22 s phase response 21 CTB composite triple beat X cross modulation ...
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... NXP Semiconductors 860 MHz, 21.5 dB gain power doubler amplifier SYMBOL PARAMETER CSO composite second order distortion d second order distortion 2 V output voltage o NF noise figure I total current tot consumption (DC) Notes 1. Tilt = 9 dB (50 to 550 MHz) tilt = 3 −6 dB offset (550 to 750 MHz). ...
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... NXP Semiconductors 860 MHz, 21.5 dB gain power doubler amplifier −50 handbook, halfpage CTB (dB) −60 −70 −80 −90 0 200 400 = 75 Ω 110 chs; tilt = 9 dB (50 to 550 MHz tilt = 3 −6 dB offset (550 to 750 MHz). ( (3) Typ. o (2) Typ. +3 σ. (4) Typ. −3 σ. Fig.2 Composite triple beat as a function of frequency under tilted conditions ...
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... NXP Semiconductors 860 MHz, 21.5 dB gain power doubler amplifier −50 handbook, halfpage CTB (dB) −60 −70 −80 −90 0 200 400 = 75 Ω 129 chs tilt = 12.5 dB (50 to 860 MHz). ( (3) Typ. o (2) Typ. +3 σ. (4) Typ. −3 σ. Fig.5 Composite triple beat as a function of frequency under tilted conditions. ...
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... NXP Semiconductors 860 MHz, 21.5 dB gain power doubler amplifier −20 handbook, halfpage CTB (dB) −30 −40 −50 −60 (1) (2) (3) − Ω 129 chs (1) Typ. +3 σ. (2) Typ. (3) Typ. −3 σ. Fig.8 Composite triple beat as a function of output voltage. 2001 Nov 01 MGS667 handbook, halfpage ...
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... NXP Semiconductors 860 MHz, 21.5 dB gain power doubler amplifier PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads DIMENSIONS (mm are the original dimensions UNIT b c max. max. max. 0.51 mm 20.8 9 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...