bgy120b NXP Semiconductors, bgy120b Datasheet - Page 3

• Manufacturer Part Number: bgy120b
• Description: Uhf Amplifier Modules
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
Z
Note
1. With respect to P
1997 Nov 11
V
V
P
P
T
T
f
I
I
P
G
H
H
VSWR
P
d
S
Q
C
SYMBOL
im
SYMBOL
stg
mb
S
C
D
L
L
2
3
n
UHF amplifier modules
p
= Z
L
in
= 50 ; P
frequency range
total leakage current
control current
load power
power gain
efficiency
second harmonic
third harmonic
input VSWR
stability
isolation
noise power
reverse intermodulation
ruggedness
DC supply voltage
DC control voltage
input drive power
load power
storage temperature
operating mounting-base temperature
BGY120A
BGY120B
D
= 5 mW; V
int
PARAMETER
.
S
= 3.5 V; V
PARAMETER
C
V
V
V
adjust V
V
adjust V
adjust V
adjust V
adjust V
V
P
V
VSWR
V
adjust V
bandwidth = 30 kHz;
f
P
P
V
adjust V
VSWR
n
2.5 V; T
C
C
S
S
C
L
S
C
Tx
int
S
= f
= 3.2 V; T
= 3.2 V;
= 2.8 to 5 V; P
= 5 V;
= 0.3 V; P
= 2.5 V
= P
= 0.9 W; f
o
1.4 W; V
0.5 V
0.5 V
+ 45 MHz
Tx
C
C
C
C
C
C
C
6 : 1 through all phases
10 : 1 through all phases
mb
for P
for P
for P
for P
for P
for P
for P
CONDITIONS
30 dB; note 1
= 25 C; unless otherwise specified.
mb
D
C
int
L
L
L
L
L
L
L
3
< 60 dBm
= 0 to 2.9 V;
= 85 C
= f
= 1 W
= 0.9 W
= 0.9 W
= 0.9 W
= 0.9 W
= 1 W;
= 1.4 W;
D
Tx
= 4 to 10 dBm;
45 MHz;
824
872
1
0.71
23
55
no degradation
40
30
MIN.
MIN.
BGY120A; BGY120B
60
-40
TYP.
5
2.9
10
1.4
+100
+100
Objective specification
MAX.
849
905
10
10
2 : 1
4 : 1
MAX.
35
40
60
90
8
V
V
mW
W
C
C
UNIT
MHz
MHz
mA
W
W
dB
%
dBc
dBc
dBc
dBm
dBm
dB
A
UNIT