bgy120b NXP Semiconductors, bgy120b Datasheet - Page 2

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bgy120b

Manufacturer Part Number
bgy120b
Description
Uhf Amplifier Modules
Manufacturer
NXP Semiconductors
Datasheet
APPLICATIONS
DESCRIPTION
The BGY120A and BGY120B are two-stage UHF amplifier
modules in a SOT482B package with plastic cover. Each
module consists of two NPN silicon planar transistor dies
mounted together with a matching and bias circuit
components on a metallized ceramic substrate.
These modules produce an output power of 1 W into a
load of 50
Philips Semiconductors
FEATURES
QUICK REFERENCE DATA
RF performance at T
1997 Nov 11
Single 3.5 V nominal supply voltage
1 W output power
Easy control of output power by DC voltage
Very high efficiency (typ. 60%)
Silicon bipolar technology
Standby current less than 10 A.
Hand-held transmitting equipment operating in the
824 to 849 MHz and 872 to 905 MHz frequency ranges.
UHF amplifier modules
BGY120A
BGY120B
TYPE
with an RF drive power of 5 mW.
mb
OPERATION
MODE OF
= 25 C.
CW
CW
824 to 849
872 to 905
(MHz)
f
2
(V)
3.5
3.5
PINNING - SOT482B
V
handbook, halfpage
S
PIN
1
2
3
4
5
(W)
P
1
1
L
Bottom view
Fig.1 Simplified outline
4
BGY120A; BGY120B
RF input
V
V
RF output
flange connected to ground
3
(dB)
C
S
G
23
23
p
5
2
DESCRIPTION
Objective specification
MBK201
typ. 60
typ. 60
1
(%)
Z
S
( )
50
50
; Z
L

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