pef80913 Infineon Technologies Corporation, pef80913 Datasheet - Page 208

• Manufacturer Part Number: pef80913
• Description: 2b1q Second Gen. Modular Isdn Nt
• Manufacturer: Infineon Technologies Corporation

5
5.1
•
Parameter
Ambient temperature under bias
Storage temperature
Maximum Voltage on V
Maximum Voltage on any pin with respect to
ground
ESD integrity (according EIA/JESD22-A114B (HBM)): 2 kV
Note: Stress above those listed here may cause permanent damage to the device.
Line Overload Protection
The Q-SMINT I is compliant to ESD tests according to ANSI / EOS / ESD-S 5.1-1993
(CDM), EIA/JESD22-A114B (HBM) and to Latch-up tests according to JEDEC EIA /
JESD78. From these tests the following max. input currents are derived
•
Table 36
Test
ESD
Latch-up
DC
Data Sheet
Exposure to absolute maximum ratings conditions for extended periods may affect
device reliability.
Electrical Characteristics
Absolute Maximum Ratings
Maximum Input Currents
DD
Pulse Width
100 ns
5 ms
--
Current
1.3 A
+/-200 mA
10 mA
194
Symbol Limit Values
T
T
V
V
A
STG
DD
S
-40 to 85
– 65 to 150
4.2
-0.3 to V
(max. < 5.5)
Remarks
3 repetitions
2 repetitions, respectively
Electrical Characteristics
DD
PEF 82912/82913
+ 3.3
(Table
2001-03-30
36):
Unit
°C
°C
V
V