tea1118t NXP Semiconductors, tea1118t Datasheet - Page 14

• Manufacturer Part Number: tea1118t
• Description: Versatile Cordless Transmisssion Circuit
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1997 Jul 14
Transmit amplifier (pins TX , TX and GAT)
G
CMRR
V
V
V
Transmit mute (pin TMUTE; TEA1118A only)
V
V
I
Receive amplifier (pins IR, QR and GAR)
G
V
V
SYMBOL
TMUTE
Z
Z
G
G
G
G
G
G
G
LN(max)
TX(max)
notx
IL
IH
o(rms)
norx(rms)
Versatile cordless transmisssion circuit
vtx
vrx
i
i
vtx(f)
vtx(T)
vtxr
vtxm
vrx(f)
vrx(T)
vrxr
input impedance
voltage gain from TX+/TX to LN
gain variation with frequency
referred to 1 kHz
gain variation with temperature
referred to 25 C
common mode rejection ratio
gain voltage reduction range
(TEA1118 only)
maximum sending signal
(RMS value)
maximum transmit input voltage
(RMS value)
noise output voltage at pin LN; pins
TX+/TX shorted through 200
gain reduction
LOW level input voltage
HIGH level input voltage
input current
input impedance
voltage gain from IR to QR
gain variation with frequency
referenced to 1 kHz
gain variation with temperature
referenced to 25 C
gain voltage reduction range
maximum receive signal
(RMS value)
noise output voltage at pin QR
(RMS value)
differential between pins
TX+ and TX
single-ended between pins
TX+/TX and V
TEA1118
TEA1118A
PARAMETER
EE
V
f = 300 to 3400 Hz
T
external resistor connected
between GAT and REG
I
I
I
I
psophometrically weighted
(P53 curve)
TMUTE = HIGH
input level = HIGH
V
f = 300 to 3400 Hz
T
external resistor connected
between GAR and QR
I
R
I
R
IR open-circuit;
R
psophometrically weighted
(P53 curve)
line
line
line
line
P
P
amb
amb
TX
IR
L
L
L
= 0 mA sine wave drive;
= 0 mA sine wave drive;
= 150 ; THD = 2%
= 450 ; THD = 2%
= 150 ;
= 4 mV (RMS)
= 15 mA; THD = 2%
= 4 mA; THD = 10%
= 15 mA; THD = 2%
= 75 mA; THD = 2%
= 200 mV (RMS)
= 25 to +75 C
= 25 to +75 C
CONDITIONS
14
10.1
1.4
V
V
29.8
EE
EE
MIN.
TEA1118; TEA1118A
+ 1.5
0.4
62.5
36.5
11.3
60
1.7
0.8
0.45
0.9
80
1.25
20
31
0.25
0.35
TYP.
0.2
0.3
84
0.2
0.3
89
86
Product specification
12.5
6
V
V
3
32.2
12
EE
CC
MAX.
+ 0.3 V
+ 0.4 V
k
k
dB
dB
dB
dB
dB
V
V
V
V
dBmp
dB
k
dB
dB
dB
dB
V
V
dBVp
dBVp
UNIT
A