MC803256K32L-6 MOSYS, MC803256K32L-6 Datasheet - Page 2

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MC803256K32L-6

Manufacturer Part Number
MC803256K32L-6
Description
Stand Alone Memories Based on Its 1T-SRAM Technology
Manufacturer
MOSYS
Datasheet
DS12, Rev 1.7 – 01/26/01
BW3#
BW2#
BW1#
BWE#
BW4#
ADSC#
ADSP#
A[17:0]
GW#
ADV#
CE1#
LBO#
CE2
CLK
OE#
© 2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086
Figure 2 Functional Block Diagram
D
D
Registers
D
D
Registers
DQ[32:2
ByteWrite
DQ[24:17]
ByteWrite
CL
ByteWrite
CLK
ByteWrite
CKE# Q1
CLR
D
Address
Register
CKE#
CLK
Registers
CL
Registers
CLK
D
Enable
Register
CKE#
CLK
D
Register
Counter
DQ[16:9
DQ[8:1]
CLK
Enable
CL
Binary
Delay
Preliminary Information
Q
Q
Q
Q
Q
Q
Q
MC803256K32, MC803256K36
256Kx32/36 Pipeline Burst RAM
18
Vdd
SCD
DCD
16
18
OE
32/36
Register
Output
256K x 32/36
32/36
Memory
4
DATA[32/36:1]
Array
Register
Input
32/36
Page 2

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