MC803256K32L-6 MOSYS, MC803256K32L-6 Datasheet

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MC803256K32L-6

Manufacturer Part Number
MC803256K32L-6
Description
Stand Alone Memories Based on Its 1T-SRAM Technology
Manufacturer
MOSYS
Datasheet
______________________________________________
Overview
The MoSys MC803256K is a high performance, low
power pipeline-burst-SRAM (PBSRAM). Fabricated using
an advanced low power, high performance CMOS proc-
ess, the MoSys MC803256K is backward pin and func-
tion compatible with standard 32Kx32/36, 64Kx32/36
and 128Kx32/36 PBSRAMs with additional operating
features like low power ZZ standby mode and linear
burst order addressing. These additional operating fea-
tures are defined so that, with proper implementation,
PC boards can work transparently with 32Kx32/36,
64Kx32/36, 128Kx32/36 or 256Kx32/36 configurations,
allowing the designer maximum configuration flexibility
within a single footprint layout.
The MoSys MC803256K supports PBSRAM operating
modes at maximum burst frequency including indefinite
pipeline read or write (3-1-1-1-1-1-1...)
DS12, Rev 1.7 – 01/26/01
Clock to High-Z
High performance, low power pipeline burst SRAM
High Performance
Low Power
Compatibility
Applications
Access Time
Cycle Time
Parameter
Ultra low power for green PC and battery
powered PC
133-166MHz Speed grades
3-1-1-1 Burst Read
1-1-1-1 Burst Write
3-1-1-1-1-1-1-1... pipeline operation
Low active power
Ultra low power ZZ standby mode
Single 3.3V supply (V
Isolated 3.3V or 2.5V I/O supply (V
Individual Byte Write and Global Write mask-
ing
Interleave and burst address support
Industry standard 100-Pin PBSRAM pinout
Industry standard PBSRAM specification
Processor L2 Cache
Ideal for high speed, low power communica-
tions buffers
Power sensitive portable DSP applications
Symbol
tKQHZ
tKQ
tKC
© 2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086
-7R5
7.5
4.5
4
DD
)
3.5
3.4
-6
6
Unit
DDQ
ns
ns
ns
)
Preliminary Information
MC803256K32, MC803256K36
256Kx32/36 Pipeline Burst RAM
Available in 256Kx32 and 256Kx36 bit densities, the
MoSys MC803256K is packaged in a standard 100 lead
LQFP.
Lowest Power
The MC803256K affords systems dramatic power sav-
ings due to the benefits of its proprietary MoSys tech-
nology. Peak operating power of a typical PBSRAM is
5x that of the MC803256K. Making it ideal for portable
applications, as well as applications requiring a large
amount of RAM.
Part Number Designation
Example : MC803256K32L-7R5 I
Device Designation: MC8 :, Series: 03
Organization:
Package Type: L=LQFP
Speed: – 7R5
Temp: I = Industrial Temperature
NC, (DQP3)
NC, (DQP4)
VDDQ
VDDQ
VDDQ
VDDQ
VSSQ
VSSQ
VSSQ
VSSQ
DQ17
DQ18
DQ19
DQ20
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ32
DQ21
DQ31
VDD
VSS
NC
NC
– 6
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
Figure 1. Pin Function
256K32 - 256Kx32 SCD
256D32 - 256Kx32 DCD
133MHz
166MHz
0.65 mm nominal pin pitch
20 mm x 14 mm body
100 Pin LQFP
100 Pin PQFP
80
79
78
77
76
75
74
73
72
70
69
68
67
66
65
64
63
62
60
59
58
57
56
55
54
53
52
71
61
51
NC, (DQP2)
DQ16
DQ15
VDDQ
VSSQ
DQ14
DQ13
DQ12
DQ11
VSSQ
VDDQ
DQ10
DQ9
VSS
NC
VDD
ZZ
DQ8
DQ7
VDDQ
VSSQ
DQ6
DQ5
DQ4
DQ3
VSSQ
VDDQ
DQ2
DQ1
NC, (DQP1)
Page 1

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MC803256K32L-6 Summary of contents

Page 1

... MoSys tech- nology. Peak operating power of a typical PBSRAM is 5x that of the MC803256K. Making it ideal for portable applications, as well as applications requiring a large amount of RAM. Part Number Designation Example : MC803256K32L-7R5 I Device Designation: MC8 :, Series: 03 Organization: Unit Package Type: L=LQFP Speed: – 7R5 ns – ...

Page 2

... CLK ADV# ADSC# ADSP# A[17:0] GW# BWE# BW4# BW3# BW2# BW1# CE1# CE2 OE# DS12, Rev 1.7 – 01/26/01 © 2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM Binary Counter CLK CKE# Q1 CLR Address Register ...

Page 3

... Input High Voltage V il Input Low Voltage Ts Storage Temperature Notes: Max Vih is not to exceed maximum VDDQ DS12, Rev 1.7 – 01/26/01 © 2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM Symbol Type Description A[17:0] Input ...

Page 4

... Sleep mode, clock stopped, all inputs > 2 max DDZ Table 6. Pin Capacitance Symbol C Input Pin Capacitance I C I/O Pin Capacitance I/O DS12, Rev 1.7 – 01/26/01 © 2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM Condition Min 3.3V ±5% 3.135 2.5V +38%/-5% 2.375 1.8 -0 ...

Page 5

... OE# to output invalid tWS GW#, BWx# setup tWH GW#, BWx# hold tZZs ZZ standby tZZREC ZZ recovery DS12, Rev 1.7 – 01/26/01 © 2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM -6 -7R5 (166 MHz) (133 MHz) Min Max Min ...

Page 6

... CE2 tOEQ OE# tOELZ Data-Out tKQLZ tKQ Data-In DS12, Rev 1.7 – 01/26/01 © 2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM Burst Read tKC tKH tKL ADSP# is blocked by CE1# inactive tADSH ADSC# initiated read ...

Page 7

... CE1# tCES tCEH CE2 OE# Data-Out tDS Data-In 1a DS12, Rev 1.7 – 01/26/01 © 2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM Burst Write Write tKC tKH tKL ADSP# is blocked by CE1# inactive tADSH ADSC# initiated write ...

Page 8

... CE2 tOEQ OE# tOELZ Data-Out tKQLZ tKQ Data-In DS12, Rev 1.7 – 01/26/01 © 2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM Single Write Burst Read ADSP# is blocked by CE1# inactive tADSS tADSH ADSC# initiated read ...

Page 9

... CE1# tCES tCEH CE2 OE# tOELZ Data-Out tKQLZ tKQ Data-In ZZ DS12, Rev 1.7 – 01/26/01 © 2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM Snooze - With Data Retention tKC tKH tKL tAAH tWH tWH tWH RD ...

Page 10

... VDDQ/2 on the input waveform to the output waveform moving off 20% from its initial to final value VDDQ/2. Figure 7. LQFP Mechanical Characteristics DS12, Rev 1.7 – 01/26/01 © 2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM Preliminary Information Page 10 ...

Page 11

... A17-2 LBO A17 DDQ DS12, Rev 1.7 – 01/26/01 © 2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM Symbol Type Description A[17:0] Input Processor Addresses BW[4:1]# Input Processor host bus byte enables. GW# ...

Page 12

... 0.874 (22.2) 0.858 (21.8) 0.795 (20.2) 0.781 (19.84) DS12, Rev 1.7 – 01/26/01 © 2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC803256K32, MC803256K36 256Kx32/36 Pipeline Burst RAM A17-2 A17-2 ADSP# A17-2 A17-2 V DDQ ...

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