adf4218l Analog Devices, Inc., adf4218l Datasheet - Page 4

• Manufacturer Part Number: adf4218l
• Description: Dual Low Power Frequency Synthesizers
• Manufacturer: Analog Devices, Inc.

ABSOLUTE MAXIMUM RATINGS
(
V
V
V
V
Digital I/O Voltage to GND . . . . . . . . –0.3 V to V
Analog I/O Voltage to GND . . . . . . . . . –0.3 V to V
REF
RF
Operating Temperature Range
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . 150°C
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although the ADF4217L/
ADF4218L/ADF4219L feature proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
ADF4217L/ADF4218L/ADF4219L
Model
ADF4217L/ADF4218L/ADF4219LBRU
ADF4217L/ADF4218L/ADF4219LBCC
*Contact the factory for chip availability.
T
DD
DD
P
P
A
to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to V
Industrial (B Version) . . . . . . . . . . . . . . . –40°C to +85°C
1, V
1, V
IN
= 25°C, unless otherwise noted.)
1 to GND
1 to V
IN
A to RF
, RF1
P
P
2 to GND . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.8 V
2 to V
DD
IN
2 . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
IN
DD
3
(A, B), IF
B . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 320 mV
1 . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.5 V
. . . . . . . . . . . . . . . . . . . . . . –0.3 V to +3.6 V
IN
(A, B)
1, 2
Temperature
Range
–40°C to +85°C
–40°C to +85°C
DD
DD
P
+ 0.3 V
+ 0.3 V
+ 0.3 V
ORDERING GUIDE
–4–
Package
Description
Thin Shrink Small Outline Package (TSSOP)
Chip Array CASON (LGA)
TSSOP
LGA
Lead Temperature, Soldering
NOTES
1
2
3
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
This device is a high performance RF integrated circuit with an ESD rating of
< 2 kV and is ESD sensitive. Proper precautions should be taken for handling and
assembly.
GND = AGND = DGND = 0 V.
TSSOP, Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . 215°C
TSSOP, Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . 220°C
LGA, Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . 240°C
LGA, Infrared (20 sec) . . . . . . . . . . . . . . . . . . . . . . . 240°C
JA
JA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112°C/W
Thermal Impedance . . . . . . . . . . . . . 150.4°C/W
Package
Option
RU-20
CC-24
*
REV. C