mt45w4mw16b Micron Semiconductor Products, mt45w4mw16b Datasheet - Page 41

• Manufacturer Part Number: mt45w4mw16b
• Description: Async/page/burst Cellularramtm 1.0 Memory
• Manufacturer: Micron Semiconductor Products

Figure 30:
Table 22:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Symbol
t
t
t
t
t
t
t
t
DQ[15:0]
ABA
ACLK
BOE
CEM
CEW
CLK
CSP
HD
LB#/UB#
A[21:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IL
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
OL
IH
IH
IL
OH
OL
OH
Burst READ Timing Parameters – Single Access
Single-Access Burst READ Operation
Min
12.5
4.5
1
2
High-Z
-708
READ Burst Identified
Notes: 1. Non-default BCR settings for single-access burst READ operation: Latency code two (three
t
ADDRESS
t
SP
CSP
t
t
(WE# = HIGH)
t
VALID
SP
SP
t
SP
CEW
Max
46.5
7.5
20
20
20
9
8
t
HD
2. Clock rates below 50 MHz (
t
t
HD
HD
t
HD
High-Z
clocks); WAIT active LOW; WAIT asserted during delay.
Min
15
-706/-856
1
5
2
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
t
ABA
t
Max
CEM
7.5
56
11
20
20
20
8
t
ACLK
t
OLZ
t
BOE
Units
ns
ns
ns
µs
ns
ns
ns
ns
t
KHTL
t
CLK
OUTPUT
t
t
41
HD
VALID
CLK > 20ns) are allowed as long as
t
KOH
Symbol
t
t
t
t
t
t
t
t
HZ
KHKL
KHTL
KOH
KP
OHZ
OLZ
SP
t
OHZ
t
HZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
KP
Min
2
4
5
3
-708
Max
1.8
8
9
8
High-Z
DON’T CARE
©2003 Micron Technology, Inc. All rights reserved.
t
CSP specifications are met.
t
KP
Min
Timing Diagrams
-706/-856
2
5
5
3
Max
2.0
11
t
8
8
KHKL
UNDEFINED
Units
ns
ns
ns
ns
ns
ns
ns
ns