mt45w4mw16b Micron Semiconductor Products, mt45w4mw16b Datasheet - Page 12

• Manufacturer Part Number: mt45w4mw16b
• Description: Async/page/burst Cellularramtm 1.0 Memory
• Manufacturer: Micron Semiconductor Products

Figure 8:
Figure 9:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
DQ[15:0]
Burst Mode READ (4-word Burst)
DQ[15:0]
Burst Mode WRITE (4-word Burst)
LB#/UB#
LB#/UB#
A[21:0]
A[21:0]
ADV#
ADV#
WAIT
WAIT
WE#
WE#
OE#
CLK
OE#
CE#
CLK
CE#
Note:
Note:
WRITE Burst Identified
READ Burst Identified
Non-default BCR settings for burst mode READ (4-word burst): Latency code two (three
clocks); WAIT active LOW; WAIT asserted during delay.
Non-default BCR settings for burst mode WRITE (4-word burst): Latency code two (three
clocks); WAIT active LOW; WAIT asserted during delay.
ADDRESS
(WE# = LOW)
ADDRESS
(WE# = HIGH)
VALID
VALID
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Latency Code 2 (3 clocks)
Latency Code 2 (3 clocks)
12
D[0]
D[0]
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D[1]
D[1]
DON’T CARE
D[2]
D[2]
Bus Operating Modes
©2003 Micron Technology, Inc. All rights reserved.
UNDEFINED
DON’T CARE
D[3]
D[3]