mt48h4m16lf Micron Semiconductor Products, mt48h4m16lf Datasheet - Page 40

• Manufacturer Part Number: mt48h4m16lf
• Description: 64mb 4 Meg X 16 Mobile Sdram Features
• Manufacturer: Micron Semiconductor Products

Table 12:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
AC Characteristics
Parameter
Access time from CLK (positive edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE command period
ACTIVE-to-READ or WRITE delay
Refresh period (4,096 rows)
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
Transition time
WRITE recovery time
Exit SELF REFRESH-to-ACTIVE command
Electrical Characteristics and Recommended AC Operating Conditions
Notes: 5, 6, 8, 9, and 11; notes appear on page 43 and 44
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
Symbol
t
t
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
HZ (3)
HZ (2)
t
t
t
t
t
t
t
t
CMH
t
t
t
t
CKH
CMS
t
t
tAS
t
OH
RCD
RRD
CKS
t
RAS
t
t
XSR
t
t
REF
RFC
WR
OH
AH
DH
CH
DS
RC
CL
RP
t
LZ
T
N
40
Min
67.5
19.2
19.2
2.5
7.5
9.6
2.5
2.5
2.5
2.5
1.8
0.5
45
75
15
15
75
1
3
3
1
1
1
1
–
–
–
–
–
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-75
120,000
Max
64Mb: 4 Meg x 16 Mobile SDRAM
100
100
1.2
64
6
8
–
–
–
–
–
–
–
–
–
–
6
8
–
–
–
–
–
–
–
–
–
–
Min
2.5
2.5
2.5
2.5
2.5
1.8
0.5
12
48
72
24
80
24
16
15
80
1
3
3
8
1
1
1
1
–
–
–
–
–
Electrical Specifications
-8
120,000
©2006 Micron Technology, Inc. All rights reserved.
Max
100
100
1.2
64
6
8
–
–
–
–
–
–
–
–
–
–
6
8
–
–
–
–
–
–
–
–
–
–
Units
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
23
23
10
10
26
24
20
7