mt48h8m16lf Micron Semiconductor Products, mt48h8m16lf Datasheet - Page 57
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mt48h8m16lf
Manufacturer Part Number
mt48h8m16lf
Description
128mb 8 Meg X 16, 4 Meg X 32 Mobile Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT48H8M16LF.pdf
(74 pages)
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Figure 35:
Figure 36:
PDF: 09005aef832ff1ea / Source: 09005aef832ff1ac
sdr_mobile_sdram_cmd_op_timing_dia_fr5.08__4.fm - Rev. B 6/08 EN
Internal
states
Internal
States
READ With Auto Precharge Interrupted by a READ
READ With Auto Precharge Interrupted by a WRITE
Notes:
Notes:
Command
Command
BANK m
Address
Address
BANK n
Bank m
Bank n
DQM
CLK
CLK
1. DQM is LOW.
1. DQM is HIGH at T2 to prevent D
DQ
DQ
1
Active
Page
READ - AP
Bank n,
BANK n
Page active
T0
Col a
NOP
T0
READ with burst of 4
READ - AP
Bank n,
BANK n
Page active
Page active
Col a
T1
T1
NOP
CL = 3 (bank n)
READ with burst of 4
CL = 3 (bank n)
T2
T2
NOP
NOP
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
57
READ - AP
Bank m,
T3
BANK m
T3
OUT
Col d
D
NOP
OUT
a
Interrupt burst, precharge
READ with burst of 4
a + 1 from contending with D
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE - AP
Bank m,
Col d
BANK m
T4
T4
CL = 3 (bank m)
D
NOP
d
IN
Interrupt burst, precharge
D
WRITE with Burst of 4
OUT
a
t
RP - BANK n
T5
T5
d + 1
NOP
NOP
D
IN
D
a + 1
OUT
t
RP - Bank n
T6
T6
d + 2
NOP
NOP
D
IN
D
OUT
©2008 Micron Technology, Inc. All rights reserved.
d
IN
Don’t Care
Don’t Care
Timing Diagrams
d at T4.
Idle
T7
T7
t WR - Bank m
d + 3
NOP
NOP
D
t RP - Bank m
IN
precharge
Write-back
D
d + 1
OUT
Idle
Preliminary