cy7c1380c-250bzc Cypress Semiconductor Corporation., cy7c1380c-250bzc Datasheet - Page 25

• Manufacturer Part Number: cy7c1380c-250bzc
• Description: 18-mb 512k X 36/1m X 18
• Manufacturer: Cypress Semiconductor Corporation.

Document #: 38-05237 Rev. *D
Electrical Characteristics
Capacitance
Thermal Resistance
I
I
Shaded areas contain advance information.
Notes:
C
C
C
Notes:
12. Overshoot: V
13. TPower-up: Assumes a linear ramp from 0v to V
14. Tested initially and after any design or process change that may affect these parameters
Parameter
SB3
SB4
IN
CLK
I/O
Parameter
Parameter
4
4
JC
JA
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—TTL Inputs
IH
(AC) < V
[14]
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Input Capacitance
Clock Input Capacitance
Input/Output Capacitance
Description
DD
Description
+1.5V (Pulse width less than t
Description
[14]
Over the Operating Range
V
V
f = f
V
V
DD
IN
DD
IN
DD
MAX
d 0.3V or V
t V
(min.) within 200ms. During this time V
= Max, Device Deselected, or
= Max, Device Deselected,
Test conditions follow standard
test methods and procedures
for measuring thermal
impedence, per EIA / JESD51.
IH
T
V
V
= 1/t
CYC
A
DD
DDQ
or V
= 25qC, f = 1 MHz,
/2), undershoot: V
Test Conditions
= 3.3V.
Test Conditions
CYC
= 2.5V
IN
IN
d V
> V
IL
Test Conditions
DDQ
, f = 0
[12, 13] (continued)
– 0.3V
IL
(AC) > -2V (Pulse width less than t
IH
All speeds
4.0-ns cycle, 250 MHz
4.4-ns cycle, 225 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
7.5-ns cycle, 133 MHz
< V
Package
DD
Package
TQFP
TQFP
and V
5
5
5
31
6
DDQ
< V
Package
DD\
Package
CYC
BGA
BGA
8
8
8
45
/2).
7
Min.
Package
CY7C1380C
CY7C1382C
Package
fBGA
fBGA
9
9
9
46
3
Max.
100
105
95
85
80
80
Page 25 of 36
qC/W
qC/W
Unit
Unit
pF
pF
pF
Unit
mA
mA
mA
mA
mA
mA