cy7c1380d-250bzxi Cypress Semiconductor Corporation., cy7c1380d-250bzxi Datasheet - Page 18

• Manufacturer Part Number: cy7c1380d-250bzxi
• Description: 18-mbit 512k X 36/1m X 18 Pipelined Sram
• Manufacturer: Cypress Semiconductor Corporation.

Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device. For user guidelines, not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V
Electrical Characteristics
Notes:
Document #: 38-05543 Rev. *E
17. Overshoot: V
18. TPower up: Assumes a linear ramp from 0v to V
V
V
V
V
V
V
I
I
I
I
I
I
I
Parameter
X
OZ
DD
SB1
SB2
SB3
SB4
DD
DDQ
OH
OL
IH
IL
IH
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
except ZZ and MODE
Input Current of MODE
Input Current of ZZ
Output Leakage Current GND ≤ V
V
Current
Automatic CE
Power Down
Current—TTL Inputs
Automatic CE Power
Down Current-CMOS
Inputs
Automatic CE
Power Down
Current—CMOS Inputs
Automatic CE
Power Down
Current—TTL Inputs
(AC) < V
DD
Operating Supply
Description
DD
DDQ
DD
Relative to GND ....... –0.3V to +4.6V
+1.5V (pulse width less than t
Relative to GND ...... –0.3V to +V
[17]
[17]
Over the Operating Range
for 3.3V IO
for 2.5V IO
for 3.3V IO, I
for 2.5V IO, I
for 3.3V IO, I
for 2.5V IO, I
for 3.3V IO
for 2.5V IO
for 3.3V IO
for 2.5V IO
GND ≤ V
Input = V
Input = V
Input = V
Input = V
V
f = f
V
V
f = f
V
V
V
V
f = f
V
V
DD
DD
DD
IN
DD
IN
DD
IN
DD
IN
(min.) within 200 ms. During this time V
MAX
MAX
MAX
≥ V
≤ 0.3V or V
≤ 0.3V or V
≥ V
= Max., I
= Max, Device Deselected,
= Max, Device Deselected,
= Max, Device Deselected, or
= Max, Device Deselected,
CYC
IH
IH
= 1/t
= 1/t
= 1/t
I
I
DDQ
SS
DD
SS
DD
or V
or V
≤ V
≤ V
/2), undershoot: V
OH
OH
OL
OL
CYC
CYC
CYC
OUT
DDQ
DDQ,
+ 0.5V
IN
IN
IN
IN
= 8.0 mA
= 1.0 mA
= –4.0 mA
= –1.0 mA
≤ V
≤ V
> V
= 0 mA,
> V
DD
Output Disabled
IL
IL
DDQ
Test Conditions
DDQ
, f = 0
[17, 18]
IL
– 0.3V, f = 0
(AC) > –2V (pulse width less than t
DC Input Voltage ................................... –0.5V to V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current .................................................... >200 mA
Operating Range
– 0.3V
Commercial
Industrial
Range
IH
< V
All speeds
All speeds
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
DD
–40°C to +85°C
and V
Temperature
0°C to +70°C
Ambient
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
DDQ
< V
DD
CYC
.
/2).
3.3V –5%/+10% 2.5V – 5%
3.135
3.135
2.375
Min.
–0.3
–0.3
–30
2.4
2.0
2.0
1.7
–5
–5
–5
V
DD
V
V
DD
DD
2.625
Page 18 of 30
Max.
V
350
300
275
160
150
140
135
130
125
3.6
0.4
0.4
0.8
0.7
30
70
80
+ 0.3V
+ 0.3V
5
5
5
DD
DD
to V
V
DDQ
+ 0.5V
DD
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
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