om60n10sc International Rectifier Corp., om60n10sc Datasheet - Page 8

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om60n10sc

Manufacturer Part Number
om60n10sc
Description
Low Voltage, Low Rds On Power Mosfets In Hermetic Isolated Package
Manufacturer
International Rectifier Corp.
Datasheet
3.1
OM55N10SA - OM75N06SC
Gate Charge vs Gate-Source Voltage
V
g
GS
(norm)
V
fs
GS(th)
(V)
(S)
12
80
60
40
20
1.2
1.0
0.8
0.6
0.4
8
4
0
0
0
0
Normalized Gate Threshold
V
Voltage vs Temperature
DS
-50
> I
Transconductance
OM75N06SC, OM75N06SA, OM75N05SC, OM75N05SA
D(on)
20
40
x R
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
0
DS(on)max
40
80
50
60
T
V
I
I
V
J
DS
D
D
100
DS
= 25°C
= 250µA
= 40A
120
= 25V
T
T
= V
J
J
= -40°C
80
= 125°C
GS
T
Q
J
(°C)
g
I
D
(nC)
(A)
R
(norm)
R
Static Drain-Source On Resistance
C(nF)
DS(on)
DS(on)
1.5
1.0
0.5
14
12
10
0
8
6
8
6
4
2
0
0
0
Normalized On Resistance
Capacitance Variations
-50
V
GS
20
10
vs Temperature
= 10V
0
40
20
50
60
30
V
f = 1MHz
V
I
100
GS
D
DS
= 40A
= 10V
= 0
C
80
C
C
40
oes
ies
res
T
J
(°C)
V
DS
I
D
(A)
(V)

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