om60n10sc International Rectifier Corp., om60n10sc Datasheet - Page 6

• Manufacturer Part Number: om60n10sc
• Description: Low Voltage, Low Rds On Power Mosfets In Hermetic Isolated Package
• Manufacturer: International Rectifier Corp.

OM75N05SA
Avalanche Characteristics
Electrical Charactreristics - OFF
Electrical Charactreristics - ON
Electrical Charactreristics - Dynamic
Electrical Charactreristics - Switching On
Electrical Charactreristics - Switching Off
Electrical Charactreristics - Source Drain Diode
I
E
E
I
V
I
I
V
R
I
g
C
C
C
T
t
(di/dt)
Q
T
t
t
I
I
V
t
Q
I
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
AR
AR
DSS
GSS
D(on)
r
f
cross
SD
SDM
rr
RRM
fs
d(on)
r(Voff)
AS
AR
(BR)DSS
GS(th)
DS(on)
ies
oes
res
SD
g
rr
(*)
on
Avalanche Current
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Drain-Source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-Body Leakage
Current (V
Gate Threshold Voltage
Static Drain-Source On
Resistance
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Rise Time
Turn-On Current Slope
Total Gate Charge
Off Voltage Rise Time
Fall Time
Cross-Over Time
Source Drain Current
Source Drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
DS
(T
= 0)
C
= 25°C unless otherwise specified)
GS
= 0)
Min. Typ. Max. Units Test Conditions
75
25
50
2
4100
1800
0.45
420
190
900
150
130
360
280
600
120
6.5
0.018
0.036
1000
±100
900
200
250
300
1.5
70
40
75
4
A/µS V
mJ
mJ
nC
µA
µA
nA
pF
pF
pF
nS
nS
nS
nS
nS
nS
µC
A
A
V
V
A
S
A
A
V
A
V
V
V
T
V
V
V
V
V
V
R
I
(repetitive or
non-repetitive,T
(starting T
I
(pulse width limited
by T
(repetitive or
non-repetitive, T
I
V
V
f = 1 mHz
V
R
R
I
V
D
D
SD
SD
C
DS
DS
GS
DS
GS
DS
DS
DS
GS
DD
G
DD
G
DD
DD
G
R
= I
= 250 µA, V
= 100°C
= 75 A, V
= 75 A, di/dt = 100 A/µs
= 20 V
= 50 , V
= 50 , V
= 50 , V
= Max. Rat. x 0.8, T
= Max. Rat.
= V
= 10 V, I
> I
> I
= 25 V
= 0
= 20 V, I
= 20 V, I
= 20 V, I
= 35 V, I
j max
= ±20 V
AR
, V
D(on)
D(on)
, d< 1%)
GS
DD
, I
J
x R
x R
= 25°C,
D
= 25 V)
GS
GS
GS
D
D
D
D
D
GS
= 250 µA
DS(on)max
DS(on)max
GS
= 40 A
= 40 A
= 40 A
= 40 A, V
= 75 A
= 10 V
= 10 V
= 10 V
= 0
J
J
= 0
= 25°C)
= 100°C)
, V
, I
D
C
GS
= 40 A
GS
= 125°C
= 10 V
= 10 V
TEST CIRCUIT FOR INDUCTIVE LOAD SWITCHING
25
F
G
W
AND DIODE REVERSE RECOVERY TIME
SWITCHING TIMES TEST CIRCUITS
D
S
V
DS
MOS
Diode
A
B
+
–
FOR RESISTIVE LOAD
R
V
R
–
C
D
S
FAST
Diode
A
B
G
A
B
R
L
D
S
D.U.T.
L = 100µH
85
D.U.T.
2200
µF
3.3
µF
3.3
µF
1000
µF
V
DS
V
DD