om60n10sc International Rectifier Corp., om60n10sc Datasheet - Page 7

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om60n10sc

Manufacturer Part Number
om60n10sc
Description
Low Voltage, Low Rds On Power Mosfets In Hermetic Isolated Package
Manufacturer
International Rectifier Corp.
Datasheet
V
(norm)
V
GS
GS(th)
g
Gate Charge vs Gate-Source Voltage
fs
1.2
1.0
0.8
0.6
(V)
10
(S)
50
40
30
20
10
8
6
4
2
0
0
Normalized Gate Threshold
0
0
Voltage vs Temperature
-50
OM75N06SC, OM75N06SA, OM75N05SC, OM75N05SA
Transconductance
20
20
0
V
40
DS
40
= 80V
V
DS
I
D
= 30A
> I
50
60
60
D(on)
x R
I
V
D
DS(on)max
80
100
80
DS
= 250µA
T
T
T
J
= V
J
J
= 125°C
= 40°C
= 25°C
GS
100
100
T
J
(°C)
I
Q
D
(A)
g
(nC)
3.1 - 53
R
R
(norm)
0.030
0.025
0.020
0.015
0.010
C(nF)
DS(on)
Static Drain-Source On Resistance
DS(on)
1.5
1.0
0.5
5
4
3
2
1
0
0
0
Normalized On Resistance
0
Capacitance Variations
-50
20
20
vs Temperature
V
GS
f = 1MHz
0
V
40
DS
= 10V
40
= 0
50
60
OM55N10SA - OM75N06SC
60
V
80
I
100
DS
D
= 30A
= 10V
80
100
T
C
C
C
J
oes
ies
res
(°C)
V
I
D
DS
(A)
(V
3.1

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