cha2190 United Monolithic Semiconductors, cha2190 Datasheet

no-image

cha2190

Manufacturer Part Number
cha2190
Description
20-30ghz Low Noise Amplifier
Manufacturer
United Monolithic Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CHA2190
Manufacturer:
UMS
Quantity:
1 400
Part Number:
cha2190-99F
Manufacturer:
AD
Quantity:
1 400
Part Number:
cha2190-99F
Manufacturer:
UMS
Quantity:
20 000
Part Number:
cha2190-99F/00
Manufacturer:
UMS
Quantity:
1 400
Description
The circuit is a two-stages self biased wide
band monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via holes
through the substrate, air bridges and electron
beam gate lithography.
It is supplied in chip form.
Main Feature
§
§
§
§
§
§
Main Characteristics
Tamb = +25°C
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Symbol
Ref :
NF
Broad band performance 20-30GHz
2.2dB noise figure
15dB gain,
Low DC power consumption, 50mA
20dBm 3rd order intercept point
Chip size : 1.670 x 1.03x 0.1mm
G
G
DSCHA21902036 -05-Feb.-02-
Gain
Gain flatness
Noise figure at freq : 40GHz
0.5dB gain flatness
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
20-30GHz Low Noise Amplifier
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
GaAs Monolithic Microwave IC
United Monolithic Semiconductors S.A.S.
Parameter
self biased
1/9
-10
-14
-18
-22
-26
18
14
10
-2
-6
6
2
14
16
Specifications subject to change without notice
dBS11
On wafer typical measurement
18
Min
13
20
Frequency ( GHz )
22
dBS21
Typ
2.2
15
.0.5
24
RoHS COMPLIANT
26
CHA2190
dBS22
Max
28
3
1
30
32
Unit
NF
dB
dB
dB
34
36

Related parts for cha2190

cha2190 Summary of contents

Page 1

... Tamb = +25°C Symbol NF Noise figure at freq : 40GHz G Gain Gain flatness G ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref : DSCHA21902036 -05-Feb.-02- United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0 Fax : +33 (0 self biased ...

Page 2

... Storage temperature range (4) Operation of this device above anyone of these paramaters may cause permanent damage. (5) Duration < 1s. (6) See chip biasing options page 8/9 Ref : DSCHA21902036 -05-Feb.-02- Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-30GHz Low Noise Amplifier Parameter ...

Page 3

... Ref : DSCHA21902036 -05-Feb.-02- Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 dBS12 PS12 dBS21 mod. pha. mod. dB deg. dB -70.84 -53.91 -29.15 -61.97 -91.19 -54.49 -63.84 -162.71 -21.34 -64.59 167.32 -14.41 -62.91 152.65 -7.52 -62.00 165.51 -1.20 -61.10 65.75 4.21 -54.13 -36.78 8.62 -45.84 -88.69 12.13 -41.70 -126.55 14.89 -38.40 -159.80 16.82 -36.52 168.18 17.53 -34.29 139.94 17.39 -34.84 112.28 16.98 -34.82 93.31 16.44 -34.24 79.42 15.90 -33.88 62 ...

Page 4

... Gain: Vd= Id( Vd=4.5V Vg2=+1V (all biasing options Ref : DSCHA21902036 -05-Feb.-02 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0 Fax : +33 (0 dBS21 NF dBS11 Frequency ( GHz ) Gain: Vd=4V Vg2=-1V ...

Page 5

... Tamb = +25°C These values are representative of the package assembly with input and output bonding. T ypical Output power –1dB for typical biasing Ref : DSCHA21902036 -05-Feb.-02- Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 -12 - Input Power (dBm) d (Vd=4 ...

Page 6

... CHA2190 Mechanical data Chip schematic and Pad Identification Pad Size :100/100 m, chip thickness 100um Dimensions : 1670 m x 1030µm Ref : DSCHA21902036 -05-Feb.-02- Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-30GHz Low Noise Amplifier 35 m 6/9 Specifications subject to change without notice ...

Page 7

... Typical Chip Assembly - * Nominal Input and Output bonding lenght :0.3 to 0.38nH for one 25 m bond wire. - Chip backside is DC and RF grounded Ref : DSCHA21902036 -05-Feb.-02- United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0 Fax : +33 (0 20-30GHz Low Noise Amplifier ...

Page 8

... Standard Low Noise High linearity 4.5 Low noise /low current consumption Switch off 3.5 Ref : DSCHA21902036 -05-Feb.-02- Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-30GHz Low Noise Amplifier Internal DC schematic Vg2 (V) Id (mA) Typical NF(dB) Typical Gain (dB) Typical P-1dB (dB) Typical Psat (dB) ...

Page 9

... This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref : DSCHA21902036 -05-Feb.-02- Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

Related keywords