CHA3511 United Monolithic Semiconductors, CHA3511 Datasheet

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CHA3511

Manufacturer Part Number
CHA3511
Description
6-18ghz Amplifier
Manufacturer
United Monolithic Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
CHA3511
Manufacturer:
UMS
Quantity:
1 400
Part Number:
CHA3511-99F
Manufacturer:
HITTITE
Quantity:
1 400
Part Number:
CHA3511-99F
Manufacturer:
UMS
Quantity:
20 000
Description
The CHA3511 is composed of a Single Pole
Single Through (SPST) switch followed by a
double stage travelling wave amplifier. It is
designed for defence, naval, or avionic
applications. The backside of the chip is
both RF and DC grounded. This helps to
simplify the assembly process.
The circuit is manufactured with a Power-
HEMT process, 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
■16dB gain
■39dB isolation
■22 dBm saturated output power
■DC power consumption, 190mA@ 4.5V
■Chip size:
Main Characteristics
Tamb. = 25° C
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Fop
G
ISO
Psat
Wide Band: 6-18GHz
Symbol
Ref. : DSCHA35116286 - 13 Oct 06
Operating frequency range
Small signal gain @ Switch on
Delta Gain (1)
Saturated Output power @Switch on
3.55 x 2.30 x 0.1 mm
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
GaAs Monolithic Microwave IC
United Monolithic Semiconductors S.A.S.
Parameter
6-18GHz Amplifier
1/10
-10
-20
-30
-40
-50
-60
30
20
10
0
RF IN
RF IN
RF IN
RF IN
2
Typical on wafer Measurements
4
Gain versus switch states
Specifications subject to change without notice
6
6
15
35
20
Min
8
E2
E2
E2
E2
F
F
F
F
F
Frequency GHz
10
16
39
22
Typ
12
RoHS COMPLIANT
A B
A B
A B
A B
D C
D C
D C
D C
D C
18
14
Max
CHA3511
16
GHz
dB
dB
dBm
18
RF OUT
RF OUT
RF OUT
RF OUT
Unit
20

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CHA3511 Summary of contents

Page 1

... GaAs Monolithic Microwave IC Description The CHA3511 is composed of a Single Pole Single Through (SPST) switch followed by a double stage travelling wave amplifier designed for defence, naval, or avionic applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. ...

Page 2

... VSWRout Output VSWR @Config. gain Vd Drain bias DC voltage (Pads D,B) Id Bias current @ small signal Vc Control voltage for Attenuator bits Ref. : DSCHA35116286 - 13 Oct 06 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 6-18GHz Digital Variable Amplifier Parameter 6-12 GHz 12-18 GHz 2/10 ...

Page 3

... Gate voltage adjusted on A and C pads for a drain current =190mA Configuration SPST Control selected Gain 0V -5V 2: Isolation Ref. : DSCHA35116286 - 13 Oct 06 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Parameter 3/10 Specifications subject to change without notice CHA3511 Values Unit +5 V 300 ...

Page 4

... Ref. : DSCHA35116286 - 13 Oct 06 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 6-18GHz Digital Variable Amplifier S12(dB) PhS12(° ) S21(dB) -66.3 146.8 15.2 -69.6 123.3 16.3 -62.6 21.1 17.1 -59.2 -14.4 17.4 -56.1 -85.3 17.4 -54.0 -109.4 16.9 -52.6 -157.0 16.4 -51.6 163.8 15.8 -49.8 150.9 15.8 -49.8 126.6 16.1 -43.5 103.0 16.5 -43.8 37.7 17.1 -45.2 -31.4 18.7 -45.7 -156.6 20.3 -40.8 110.8 19 ...

Page 5

... Isolation/ input & output Return Loss 0 -5 -10 S11 (dB) -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 - Ref. : DSCHA35116286 - 13 Oct 06 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 S11 (dB) S22 (dB FREQUENCY (GHz) S21 (dB) S22 (dB Frequency (GHz) 5/10 ...

Page 6

... Noise Figure: test fixture measurements Tamb=+25° Ref. : DSCHA35116286 - 13 Oct 06 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 6-18GHz Digital Variable Amplifier S Parameters: test fixture measurements Measurements versus temperature Isolation(Config.Gain ...

Page 7

... Consumption versus Input power & frequency Ref. : DSCHA35116286 - 13 Oct 06 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Versus frequency Test fixture measurement Pout-1dB (dBm) Linear Gain(dB Frequency (GHz) Gain and Output power Versus input power & ...

Page 8

... Recommended circuit bonding table Label Type Ref. : DSCHA35116286 - 13 Oct 06 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 6-18GHz Digital Variable Amplifier 10n F 10n F 120pF 120pF A A 120pF 120pF 10n F 10n F Decoupling ...

Page 9

... Chip thickness : 100µm ; All dimensions are in micrometers) Ref. : DSCHA35116286 - 13 Oct 06 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 1935 1935 2580 2580 3550 3550 9/10 Specifications subject to change without notice ...

Page 10

... United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA35116286 - 13 Oct 06 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

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