CHA3513 United Monolithic Semiconductors, CHA3513 Datasheet

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CHA3513

Manufacturer Part Number
CHA3513
Description
6-18ghz 3 Bit Digital Variable Amplifier
Manufacturer
United Monolithic Semiconductors
Datasheet

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Part Number:
CHA3513
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UMS
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Part Number:
CHA3513-99F
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CHA3513-99F
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Description
The CHA3513 is composed by a three steps
digital attenuator followed by a three stage
travelling amplifier and a Single Pole Single
Through (SPST) switch. It is designed for
defense applications. The backside of the
chip is both RF and DC grounded. This helps
to simplify the assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
■ Performances: 6-18GHz
■ 20dBm saturated output power
■ 19 dB gain
■ 3 bit attenuator for 26dB range
■ DC power consumption, 300mA @ 4.5V
■ Chip size:
Main Characteristics
Tamb. = 25° C
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Symbol
ATT dyn
Ref. : DSCHA3513-8144 - 23 May 08
Psat
Fop
G
6-18GHz 3 bit Digital Variable Amplifier
Saturated Output power @ Attenuator state 0dB
6.68 x 2.46 x 0.1 mm
Small signal gain @ Attenuator state 0dB
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Operating frequency range
Attenuator range with 3bit
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
GaAs Monolithic Microwave IC
United Monolithic Semiconductors S.A.S.
Parameter
1/10
RF
RF
IN
IN
10dB
10dB
10dB
10B
10B
Specifications subject to change without notice
10A
10A
Typical on wafer Measurements
Gain versus attenuation states
Min
6
5dB
5dB
5dB
5A
5A
5B
5B
Typ
10dB
10dB
10dB
19
20
25
10A1
10A1
10B1
10B1
RoHS COMPLIANT
0dB state
5dB state
10dB state
B C F
B C F
A D E
A D E
Max
CHA3513
18
G
G
Unit
dBm
GHz
H
H
dB
dB
RF
RF
OUT
OUT

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CHA3513 Summary of contents

Page 1

... Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through (SPST) switch designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process ...

Page 2

... Control voltage for Attenuator bits & SPST switch (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. Ref. : DSCHA3513-8144 - 23 May 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 6-18GHz Digital Variable Amplifier ...

Page 3

... Isolation -5 Ref. : DSCHA3513-8144 - 23 May 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Parameter Voltage CONTROL PAD 10B 5A 5B 10A1 (V) (V) (V) ( ...

Page 4

... Typical on wafer Measurements @ 25° C Bias conditions 4.5V, Vg tuned for Id = 300mA Linear Gain versus attenuator states Linear Gain with SPST switch OFF Ref. : DSCHA3513-8144 - 23 May 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 6-18GHz Digital Variable Amplifier ...

Page 5

... Saturated output power @ nominal state dB(S11) versus frequency for all state Switch OFF dB(S22) versus frequency for all states Ref. : DSCHA3513-8144 - 23 May 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Attenuator value versus frequency for all states ...

Page 6

... Input Return Loss versus attenuation states 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 - Ref. : DSCHA3513-8144 - 23 May 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 6-18GHz Digital Variable Amplifier Switch OFF Frequency GHz ...

Page 7

... Digital Variable Amplifier Output Return Loss versus attenuation states 0 -5 -10 -15 -20 -25 - Ref. : DSCHA3513-8144 - 23 May 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Switch OFF Frequency GHz 7/10 Specifications subject to change without notice CHA3513 ...

Page 8

... Ref. : DSCHA3513-8144 - 23 May 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 6-18GHz Digital Variable Amplifier 10nF 120pF 120pF Decoupling Not required First 10dB pad control Not required ...

Page 9

... Digital Variable Amplifier Bonding pad positions (Chip thickness: 100µm) Ref. : DSCHA3513-8144 - 23 May 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 9/10 Specifications subject to change without notice CHA3513 ...

Page 10

... United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA3513-8144 - 23 May 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

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