spn7002d Sync Power Corp, spn7002d Datasheet

no-image

spn7002d

Manufacturer Part Number
spn7002d
Description
Dual N-channel Enhancement Mode Mosfet - Sync Power Crop.
Manufacturer
Sync Power Corp
Datasheet
2006/09/10
DESCRIPTION
The SPN7002D is the Dual N-Channel enhancement
mode field effect transistors are produced using high
cell density DMOS technology. These products have
been designed to minimize on-state resistance while
provide
performance. They can be used in most applications
requiring up to 300mA DC and can deliver pulsed
currents up to 1.0A. These products are particularly
suited for low voltage, low current applications such as
small servo motor control, power MOSFET gate
drivers, and other switching applications.
FEATURES
60V/0.50A , R
60V/0.30A , R
Super high density cell design for extremely low
R
Exceptional on-resistance and maximum DC
current capability
SOT-363 package design
DS (ON)
rugged,
Ver.1
SPN7002D
Dual N-Channel Enhancement Mode MOSFET
DS(ON)
DS(ON)
reliable,
= 5.0 @V
= 5.5 @V
and
GS
GS
fast
=10V
=5V
switching
APPLICATIONS
PIN CONFIGURATION ( SOT-363 / SC-70-6L )
PART MARKING
Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
High saturation current capability. Direct
Logic-Level Interface: TTL/CMOS
Battery Operated Systems
Solid-State Relays
Page 1

Related parts for spn7002d

spn7002d Summary of contents

Page 1

... SPN7002D Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7002D is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents ...

Page 2

... ORDERING INFORMATION Part Number SPN7002DS36RG á³ Week Code : á³ SPN7002DS36RG : Tape Reel ; Pb – Free ABSOULTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate –Source Voltage - Continuous Gate –Source Voltage - Non Repetitive ( t Continuous Drain Current(T =150 ) ...

Page 3

... SPN7002D Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (T Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Source-drain Current Source-drain Current (pulsed) Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge ...

Page 4

... SPN7002D Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2006/09/10 Page 4 ...

Page 5

... SPN7002D Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2006/09/10 Page 5 ...

Page 6

... SPN7002D Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2006/09/10 Page 6 ...

Page 7

... SPN7002D Dual N-Channel Enhancement Mode MOSFET TYPICAL TESTING CIRCUIT Ver.1 2006/09/10 Page 7 ...

Page 8

... SPN7002D Dual N-Channel Enhancement Mode MOSFET SOT-363 PACKAGE OUTLINE Ver.1 2006/09/10 Page 8 ...

Page 9

... SPN7002D Dual N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice ...

Related keywords