spn3006 Sync Power Corp, spn3006 Datasheet

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spn3006

Manufacturer Part Number
spn3006
Description
N-channel Logic Enhancement Mode Power Field Effect Transistors
Manufacturer
Sync Power Corp
Datasheet
2011/08/22
DESCRIPTION
The SPN3006 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology. The SPN3006 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low R
switching speed.
FEATURES
30V/30A,R
30V/15A,R
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252 package design
Ver.2
SPN3006
N-Channel Enhancement Mode MOSFET
DS(ON)
DS(ON)
= 4.7mΩ@V
= 7.5mΩ@V
GS
GS
=10V
=4.5V
DS(ON)
and fast
APPLICATIONS
PIN CONFIGURATION
PART MARKING
High Frequency Synchronous Buck Converter
DC/DC Power System
Load Switch
TO-252
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spn3006 Summary of contents

Page 1

... SPN3006 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3006 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN3006 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R switching speed ...

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... SPN3006 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin ORDERING INFORMATION Part Number SPN3006T252RGB ※ SPN3006T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (T =25 Unless otherwise noted) ℃ A Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current Pulsed Drain Current ...

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... SPN3006 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (T =25 Unless otherwise not ℃ A Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Single Pulse Avalanche Energy ...

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... SPN3006 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 1 Typical Output Characteristics Fig. 3 On-Resistance vs Gate voltage Fig. 5 On-Resistance vs Junction Temp Ver.2 2011/08/22 Fig. 2 Transfer Characteristics Fig. 4 Gate Charge Characteristics Fig. 6 Vgs vs Junction Temperature Page 4 ...

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... SPN3006 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Typical Capacitance Characteristics Fig. 9 Effective Transient Thermal Impedance Fig. 10 Switching Time Waveform Ver.2 2011/08/22 Fig. 8 Maximum Safe Operation Area Fig. 11 Unclamped Inductive Waveform Page 5 ...

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... SPN3006 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE Ver.2 2011/08/22 Page 6 ...

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... SPN3006 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice ...

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