spp9433w Sync Power Corp, spp9433w Datasheet

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spp9433w

Manufacturer Part Number
spp9433w
Description
P-channel Logic Enhancement Mode Power Field Effect Transistors
Manufacturer
Sync Power Corp
Datasheet
2011/05/30
DESCRIPTION
The SPP9433W is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
FEATURES
-30V/-6A,R
-30V/-3 A,R
Super high density cell design for extremely low
R
Exceptional on-resistance and maximum DC
current capability
SOP-8P package design
DS (ON)
Ver.1
SPP9433W
P-Channel Enhancement Mode MOSFET
DS(ON)
DS(ON)
= 42mΩ@V
= 78mΩ@V
GS
GS
=-10V
=-4.5V
APPLICATIONS
PIN CONFIGURATION(SOP – 8P)
PART MARKING
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
LCD Display inverter
Page 1

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spp9433w Summary of contents

Page 1

... SPP9433W P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9433W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ...

Page 2

... PIN DESCRIPTION Pin ORDERING INFORMATION Part Number SPP9433WS8RGB ※ SPP9433WS8RGB : 13” Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (T =25 Unless otherwise noted) ℃ A Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(T =150 ) J Pulsed Drain Current ...

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... SPP9433W P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (T =25 Unless otherwise noted) ℃ A Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge ...

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... SPP9433W P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 1 Typical Output Characteristics Fig. 3 Forward characteristics of Diodes Fig. 5 Vgs vs. Junction Temperature Ver.1 2011/05/30 Fig. 2 On-Resistance vs. Gate Voltage Fig. 4 Gate Charge Characteristics Fig. 6 On-Resistance vs Junction Temp Page 4 ...

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... SPP9433W P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Typical Capacitance Characteristics Fig. 9 Effective Transient Thermal Impedance Fig. 10 Switching Time Waveform Ver.1 2011/05/30 Fig. 8 Maximum Safe Operation Area Fig. 11 Unclamped Inductive Waveform Page 5 ...

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... SPP9433W P-Channel Enhancement Mode MOSFET SOP- 8 PACKAGE OUTLINE Ver.1 2011/05/30 Page 6 ...

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... SPP9433W P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice ...

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