bap65-01-n NXP Semiconductors, bap65-01-n Datasheet - Page 4

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bap65-01-n

Manufacturer Part Number
bap65-01-n
Description
Bap65-01 Silicon Pin Diode
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
GRAPHICAL DATA
2001 Nov 01
Silicon PIN diode
f = 100 MHz; T
Fig.2
|s
(1) I
(2) I
(3) I
Diode inserted in series with a 50
via the analyzer Tee network. T
Fig.4
(dB)
21
( )
r
|
D
-0.1
-0.2
-0.3
-0.4
-0.5
0.1
2
10
F
F
F
1
0
= 0.5 mA.
= 1 mA.
= 5 mA.
0.1
0
Forward resistance as a function of forward
current; typical values.
Insertion loss ( s
function of frequency; typical values.
j
= 25 C.
(1)
(4) I
(5) I
1
1
(4)
(2)
F
F
= 10 mA.
= 100 mA.
amb
21
2
stripline circuit and biased
= 25 C.
(5)
(3)
) of the diode as a
10
2
f (GHz)
I
F
(mA)
100
3
4
|s
(dB)
21
(pF)
f = 1 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50
T
Fig.5
|
C
2
amb
d
-10
-20
-30
-40
= 25 C.
700
600
500
400
300
200
100
0
0
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation ( s
frequency; typical values.
0
j
= 25 C.
4
1
21
2
) of the diode as a function of
8
12
Preliminary specification
2
f (GHz)
BAP65-01
16
V
stripline circuit.
R
(V)
3
20

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