BAP65-05,215 NXP Semiconductors, BAP65-05,215 Datasheet

DIODE PIN 30V 100MA SOT-23

BAP65-05,215

Manufacturer Part Number
BAP65-05,215
Description
DIODE PIN 30V 100MA SOT-23
Manufacturer
NXP Semiconductors
Type
Attenuator/Switchr
Datasheets

Specifications of BAP65-05,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Diode Type
PIN - 1 Pair Common Cathode
Voltage - Peak Reverse (max)
30V
Current - Max
100mA
Capacitance @ Vr, F
0.425pF @ 20V, 1MHz
Resistance @ If, F
350 mOhm @ 100mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Single
Reverse Voltage
30 V
Forward Continuous Current
100 mA
Carrier Life
0.17 us
Forward Voltage Drop
1.1 V at 50 mA
Maximum Diode Capacitance
0.8 pF at 3 V
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
0.9 Ohms at 10 mA
Maximum Series Resistance @ Minimum If
0.95 Ohms at 5 mA
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Forward Current
100mA
Forward Voltage
1.1V
Operating Temperature Classification
Military
Mounting
Surface Mount
Typical Carrier Life Time
170ns
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056664215
BAP65-05 T/R
BAP65-05 T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D088
BAP65-05
Silicon PIN diode
Product specification
2001 May 07

Related parts for BAP65-05,215

BAP65-05,215 Summary of contents

Page 1

... DATA SHEET ok, halfpage BAP65-05 Silicon PIN diode Product specification DISCRETE SEMICONDUCTORS M3D088 2001 May 07 ...

Page 2

... T storage temperature stg T junction temperature j 2001 May 07 PINNING PIN book, 4 columns Top view Marking code: 7Kp. Fig.1 Simplified outline (SOT23) and symbol. CONDITIONS  90  Product specification BAP65-05 DESCRIPTION anode ( anode ( common cathode MAM108 MIN. MAX. UNIT   100 mA  ...

Page 3

... 100 mA 900 MHz 100 mA 1800 MHz 100 mA 2450 MHz F when switched from 100  mA measured 100 mA 100 MHz F PARAMETER 3 Product specification BAP65-05 TYP. MAX. UNIT 0.9 1.1 V   0.7 pF 0.575 0.9 pF 0.525 0.8 pF  0.425 pF   1  0.65 0.95  ...

Page 4

... Diode zero biased and inserted in series with a 50  stripline circuit. T Fig.5 4 1000 C d (fF) 800 600 400 200 C. j Diode capacitance as a function of reverse voltage; typical values (dB) −10 −20 −30 − C. amb  2 Isolation ( the diode in off-state function of frequency; typical values. Product specification BAP65-05 MGW094 (V) MGW096 3 f (GHz) ...

Page 5

... OUTLINE VERSION IEC SOT23 2001 May scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA TO-236AB 5 Product specification detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION BAP65-05 SOT23 ISSUE DATE 04-11-04 06-03-16 ...

Page 6

... Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 6 Product specification BAP65-05 DEFINITION ...

Page 7

... NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 7 Product specification BAP65-05 ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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