bap65-01-n NXP Semiconductors, bap65-01-n Datasheet - Page 3

• Manufacturer Part Number: bap65-01-n
• Description: Bap65-01 Silicon Pin Diode
• Manufacturer: NXP Semiconductors

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
2001 Nov 01
V
I
C
r
L
R
j
s
s
s
s
s
SYMBOL
R
SYMBOL
D
L
S
= 25 C unless otherwise specified.
F
d
21
21
21
21
21
th j-s
Silicon PIN diode
2
2
2
2
2
forward voltage
reverse leakage current
diode capacitance
diode forward resistance
isolation
insertion loss
insertion loss
insertion loss
insertion loss
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
I
V
V
V
V
V
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
when switched from I
I
measured at I
I
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
R
F
R
R
R
R
R
R
R
R
= 50 mA
= 1 mA; f = 100 MHz
= 5 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz; note 1
= 100 mA; f = 100 MHz
= 1 mA; f = 900 MHz
= 1 mA; f = 1800 MHz
= 1 mA; f = 2450 MHz
= 5 mA; f = 900 MHz
= 5 mA; f = 1800 MHz
= 5 mA; f = 2450 MHz
= 10 mA; f = 900 MHz
= 10 mA; f = 1800 MHz
= 10 mA; f = 2450 MHz
= 100 mA; f = 900 MHz
= 100 mA; f = 1800 MHz
= 100 mA; f = 2450 MHz
= 100 mA; f = 100 MHz
= 6 mA; R
= 20 V
= 0 V; f = 1 MHz
= 1 V; f = 1 MHz
= 3 V; f = 1 MHz
= 20 V; f = 1 MHz
= 0; f = 900 MHz
= 0; f = 1800 MHz
= 0; f = 2450 MHz
3
CONDITIONS
L
R
= 100
= 3 mA
F
;
= 10 mA to
0.9
0.61
0.48
0.43
0.375
1.0
0.6
0.5
0.3
9.4
5.5
4.1
0.10
0.12
0.15
0.08
0.10
0.12
0.06
0.09
0.11
0.05
0.08
0.10
0.17
0.6
TYP.
VALUE
190
Preliminary specification
1.1
20
0.9
0.8
0.95
0.9
MAX.
BAP65-01
UNIT
K/W
V
nA
pF
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
nH
s
UNIT