t431616a TM Technology Inc., t431616a Datasheet - Page 20

• Manufacturer Part Number: t431616a
• Description: 1m X 16 Sdram - Taiwan Memory Technology
• Manufacturer: TM Technology Inc.

Page Write cycle at Different Bank @ Burst Length = 4
*Note : 1. To interrupt burst write by row precharge, DQM should be asserted to mask invalid input data.
Taiwan Memory Technology, Inc. reserves the right P.20
to change products or specifications without notice.
tm
C L O C K
A 1 0 /A P
A D D R
C K E
R A S
C A S
D Q M
C S
B A
D Q
W E
2. To interrupt burst write by row precharge, both the write and the precharge banks must be the same.
0
R o w A c tiv e
(A -B a n k )
R A a
R A a
CH
TE
1
2
3
W rite ( A -
B a n k )
D A a 0
C A a
4
R o w A c tiv e
(B -B a n k )
R B b
D A a 1
R B b
5
D A a 2
6
D A a 3
7
t
C D L
W rite ( B -
D B b 0
C B b
B a n k )
H I G H
8
D B b 1
9
D B b 2
1 0
D B b 3
1 1
W rite ( A -
B a n k )
D A c 0
C A c
1 2
D A c 1
1 3
W rite ( B -
C B d
D B d 0
B a n k )
1 4
D B d 1
Publication Date: DEC. 2000
1 5
t
R D L
1 6
P re c h a r g e
(A -B a n k )
* N o te 2
* N o te 1
1 7
T431616A
1 8
Revision: C
:D o n 't c a r e
1 9