si4410dy-02 NXP Semiconductors, si4410dy-02 Datasheet - Page 3

• Manufacturer Part Number: si4410dy-02
• Description: Si4410dy N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 08048
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
amb
der
P der
(%)
function of mounting base temperature.
120
100
80
60
40
20
= 25 C; I
=
0
----------------------
P
0
10 -1
10 -2
(A)
I D
10 2
tot 25 C
10
P
1
tot
10 -1
25
DM
P
is single pulse.
50
100%
t p
R DSon = V DS / I D
T
75
=
100
t p
T
t
125
T amb (
150
03aa11
o
C)
1
175
Rev. 02 — 05 July 2001
N-channel enhancement mode field-effect transistor
D.C.
Fig 2. Normalized continuous drain current as a
I
der
I der
(%)
120
100
function of mounting base temperature.
80
60
40
20
=
0
------------------ -
I
0
D 25 C
10
I
D
25
100%
50
V DS (V)
75
tp = 10 µs
1 ms
10 ms
100 ms
10 s
100
© Philips Electronics N.V. 2001. All rights reserved.
125
Si4410DY
03ae23
T amb (
150
10 2
03aa19
o
C)
175
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