si4884 NXP Semiconductors, si4884 Datasheet - Page 5

• Manufacturer Part Number: si4884
• Description: Trenchmos?? Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Characteristics
Table 4:
T
9397 750 09582
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
Q
Q
Q
C
C
C
t
t
t
t
Source-drain (reverse) diode
V
t
DSS
GSS
d(on)
r
d(off)
f
rr
j
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
reverse recovery time
Characteristics
Conditions
I
I
V
V
V
V
V
I
V
V
I
D
D
D
S
S
DS
GS
GS
GS
DS
GS
DD
T
T
= 1 A; V
= 2.3 A; dI
= 250 A; V
= 250 A; V
= 15 A; V
Rev. 02 — 12 April 2002
j
j
= 24 V; V
= 15 V; I
= 25 C
= 100 C
= 20 V; V
= 4.5 V; I
= 10 V; I
= 0 V; V
= 16 V; R
GS
DD
DS
S
D
D
D
= 0 V;
GS
D
/dt = 100 A/ s; V
GS
DS
= 10 A;
= 12 A;
= 16 V; V
DS
= 10 A;
= 16 V; f = 1 MHz;
= 10 ; V
= 0 V
= V
= 0 V
= 0 V
Figure 12
GS
;
Figure 7
GS
Figure 9
GS
= 5 V;
= 10 V
GS
and
Figure 13
Figure 11
= 0 V
8
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Min
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
11
8.9
34
17.6
4
4.4
1335 -
391
190
10.6
11.7
37
19
0.7
70
SI4884
Max
-
2
1
5
100
16.5
10.5
-
-
-
-
-
-
-
-
-
-
1.0
-
5 of 12
Unit
V
V
nA
m
m
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A