si4884 NXP Semiconductors, si4884 Datasheet

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si4884

Manufacturer Part Number
si4884
Description
Trenchmos?? Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
2. Pinning information
Table 1:
Pin
1,2,3
4
5,6,7,8
Pinning - SOT96-1, simplified outline and symbol
Description
source (s)
gate (g)
drain (d)
M3D315
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
SI4884 in SOT96-1 (SO8).
SI4884
TrenchMOS™ logic level FET
Rev. 02 — 12 April 2002
Low on-state resistance
DC to DC converters
V
P
DS
tot
= 2.5 W
= 30 V
Simplified outline
SOT96-1 (SO8)
8
1
Top view
MBK187
5
4
Symbol
Fast switching.
Portable equipment applications.
I
R
D
DSon
= 12 A
= 16.5 m .
MBB076
g
d
s
Product data

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si4884 Summary of contents

Page 1

... TrenchMOS™ logic level FET Rev. 02 — 12 April 2002 M3D315 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI4884 in SOT96-1 (SO8). 1.2 Features Low on-state resistance 1.3 Applications converters 1.4 Quick reference data V DS ...

Page 2

... Product data Conditions 150 Figure 2 and pulsed; Figure Figure Rev. 02 — 12 April 2002 SI4884 TrenchMOS™ logic level FET Min Max Unit - 2 +150 C 55 ...

Page 3

... T sp (º ------------------- der I Fig 2. Normalized continuous drain current as a function of solder point temperature Rev. 02 — 12 April 2002 SI4884 TrenchMOS™ logic level FET 03aa25 150 200 50 100 100 003aaa160 100 s ...

Page 4

... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration. 9397 750 09582 Product data Conditions minimum footprint; p Figure Rev. 02 — 12 April 2002 SI4884 TrenchMOS™ logic level FET Min Typ Max Unit - 60 - K/W 003aaa161 ...

Page 5

... MHz; Figure Figure 2 /dt = 100 Rev. 02 — 12 April 2002 SI4884 TrenchMOS™ logic level FET Min Typ Max Unit 100 ...

Page 6

... (A) Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature. Rev. 02 — 12 April 2002 SI4884 TrenchMOS™ logic level FET 003aaa163 150 ( DSon 03aa27 0 60 ...

Page 7

... C rss and 150 Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Rev. 02 — 12 April 2002 SI4884 TrenchMOS™ logic level FET 03aa36 min typ max ( 003aaa166 ...

Page 8

... Fig 13. Gate-source voltage as a function of gate charge; typical values. 9397 750 09582 Product data 10 ( (nC) Rev. 02 — 12 April 2002 SI4884 TrenchMOS™ logic level FET 003aa167 40 © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...

Page 9

... 0.25 5.0 4.0 6.2 1.27 1.05 0.19 4.8 3.8 5.8 0.0100 0.20 0.16 0.244 0.050 0.041 0.0075 0.19 0.15 0.228 REFERENCES JEDEC EIAJ MS-012AA Rev. 02 — 12 April 2002 SI4884 TrenchMOS™ logic level FET SOT96 detail X ( 1.0 0.7 0.7 0.25 0.25 0.1 0.4 0.6 0.3 0.039 0.028 ...

Page 10

... Product data; version 02. Supersedes data of 15 March 2002. Figure 20020315 - Product data; initial version 9397 750 09582 Product data label error corrected. p Rev. 02 — 12 April 2002 SI4884 TrenchMOS™ logic level FET © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...

Page 11

... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 02 — 12 April 2002 Rev. 02 — 12 April 2002 SI4884 SI4884 TrenchMOS™ logic level FET TrenchMOS™ logic level FET Fax: + 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...

Page 12

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 12 April 2002 Document order number: 9397 750 09582 SI4884 TrenchMOS™ logic level FET ...

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