sud50np04-62 Vishay, sud50np04-62 Datasheet - Page 9

• Manufacturer Part Number: sud50np04-62
• Description: Complementary N- And P-channel 40-v D-s Mosfet
• Manufacturer: Vishay

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 74401
S-62031-Rev. A, 16-Oct-06
- 0.1
- 0.3
100
100
0.7
0.5
0.3
0.1
10
80
60
40
20
1
0
0.00
0.0
- 50
Single Pulse Power, Junction-to-Case
- 25
Source-Drain Diode Forward Voltage
0.3
V
0.01
T
SD
0
J
- Junction Temperature (°C)
T
Threshold Voltage
- Source-to-Drain Voltage (V)
J
= 150 °C
25
0.6
Time (sec)
0.1
50
0.9
75
I
D
= 250 µA
T
J
100
= 25 °C
1
1.2
I
D
= 5 mA
125
1.5
150
10
0.15
0.12
0.09
0.06
0.03
0.00
0.01
100
100
80
60
40
20
0.1
10
0.01
0
0.001
1
0
On-Resistance vs. Gate-to-Source Voltage
I
Safe Operating Area, Junction-to-Ambient
D
Single Pulse Power, Junction-to-Ambient
*V
= 6 A
1
GS
Single Pulse
*Limited by r
T
0.01
C
V
2
V
= 25 °C
minimum V
GS
0.1
DS
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
3
DS(on)
25 °C
0.1
4
GS
SUD50NP04-62
Time (sec)
at which r
5
1
Vishay Siliconix
125 °C
6
1
DS(on)
7
10
www.vishay.com
is specified
10
8
9
100 µs
100 ms
10 s
dc
1 ms
10 ms
100
100
10
9