sud50np04-62 Vishay, sud50np04-62 Datasheet - Page 10

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sud50np04-62

Manufacturer Part Number
sud50np04-62
Description
Complementary N- And P-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet
SUD50NP04-62
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
10
0.01
100
18
13
0.1
22
30
24
18
12
10
0.01
9
4
0
6
0
1
0
0
*V
Safe Operating Area, Junction-to-Case
GS
Single Pulse
T
Current Derating, Junction-to-Case
Power Derating, Junction-to-Case
C
25
25
= 25 °C
V
minimum V
DS
0.1
Limited by Package
T
T
C
C
- Drain-to-Source Voltage (V)
*Limited by r
- Case Temperature (°C)
- Case Temperature (°C)
50
50
GS
at which r
75
75
1
DS(on)
DS(on)
100
100
10
is specified
125
125
1 s
1 ms
10 ms
100 ms
100
150
150
*The power dissipation P
tion-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
3.0
2.4
1.8
1.2
0.6
0.0
6
5
2
0
8
3
0
0
Current Derating, Junction-to-Ambient
Power Derating, Junction-to-Ambient
25
25
D
T
T
is based on T
A
A
- Ambient Temperature (°C)
- Ambient Temperature (°C)
50
50
75
75
S-62031-Rev. A, 16-Oct-06
J(max)
Document Number: 74401
100
100
= 150 °C, using junc-
125
125
150
150

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