sud50np04-62 Vishay, sud50np04-62 Datasheet - Page 5

• Manufacturer Part Number: sud50np04-62
• Description: Complementary N- And P-channel 40-v D-s Mosfet
• Manufacturer: Vishay

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 74401
S-62031-Rev. A, 16-Oct-06
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
0.1
1.0
0.4
0.2
0.0
50
40
30
20
10
10
0
0.00
- 50
0.0
I
Single Pulse Power, Junction-to-Case
D
Source-Drain Diode Forward Voltage
- 25
= 5 mA
0.2
I
D
V
0.01
SD
= 250 µA
T
0
J
- Source-to-Drain Voltage (V)
- Junction Temperature (°C)
Threshold Voltage
0.4
25
Time (sec)
150 °C
0.1
0.6
50
25 °C
75
0.8
100
1
1.0
125
10
150
1.2
0.15
0.12
0.09
0.06
0.03
0.00
0.01
100
50
40
30
20
10
0.1
0.001
10
0
0.01
1
0
I
D
On-Resistance vs. Gate-to-Source Voltage
*V
Safe Operating Area, Junction-to-Ambient
*Limited by r
Single Pulse Power, Junction-to-Ambient
= 6 A
1
GS
Single Pulse
T
0.01
C
2
V
minimum V
= 25 °C
V
0.1
DS
GS
- Drain-to-Source Voltage (V)
25 °C
3
DS(on)
- Gate-to-Source Voltage (V)
0.1
4
Time (sec)
GS
SUD50NP04-62
at which r
5
1
Vishay Siliconix
125 °C
6
1
DS(on)
7
10
www.vishay.com
is specified
8
10
9
100 µs
1 ms
10 ms
10 s
100 ms
dc
100
100
10
5