si1967dh Vishay, si1967dh Datasheet - Page 4

• Manufacturer Part Number: si1967dh
• Description: Dual P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Si1967DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
0.4
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
T
0.6
J
= 150 °C
50
I
D
= 250 µA
0.8
0.01
75
0.1
10
1
0.1
1.0
100
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
T
T
A
J
GS
= 25 °C
= 25 °C
1.2
125
> minimum V
V
Limited by R
DS
New Product
- Drain-to-Source Voltage (V)
150
1.4
1
BVDSS Limited
GS
DS(on) *
at which R
10
DS(on)
is specified
2.0
1.6
1.2
0.8
0.4
0.0
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.01
5
4
3
2
1
0
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= - 0.91 A
100
0.1
1
V
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
2
1
Time (s)
S-81726-Rev. A, 04-Aug-08
Document Number: 68784
3
10
T
T
J
J
= 125 °C
= 25 °C
4
100
600
5