si1967dh Vishay, si1967dh Datasheet - Page 3

• Manufacturer Part Number: si1967dh
• Description: Dual P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68784
S-81726-Rev. A, 04-Aug-08
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
8
6
4
2
0
0.0
0.0
0.0
On-Resistance vs. Drain Current and Gate Voltage
V
GS
V
I
D
= 5 thru 2.5 V
GS
= 1 A
0.5
0.5
0.5
= 1.8 V
V
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
1.0
1.0
I
1.0
- Total Gate Charge (nC)
V
D
DS
- Drain Current (A)
Gate Charge
V
= 10 V
V
GS
GS
1.5
1.5
= 2.5 V
1.5
= 4.5 V
V
DS
2.0
2.0
2.0
= 16 V
V
GS
V
V
GS
GS
= 1.5 V
2.5
2.5
2.5
= 1 V
= 2 V
New Product
3.0
3.0
3.0
200
160
120
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1.0
0.8
0.6
0.4
0.2
0.0
80
40
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
0.4
V
V
DS
T
GS
3
0
Transfer Characteristics
J
T
C
- Drain-to-Source Voltage (V)
T
V
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
C
oss
GS
= 125 °C
= 25 °C
25
Capacitance
0.8
= 4.5 V, 2.5 V; I
C
iss
50
6
Vishay Siliconix
V
GS
1.2
75
= 1.8 V; I
Si1967DH
D
T
C
= 0.91 A
= - 55 °C
100
www.vishay.com
9
1.6
D
= 0.12 A
125
150
2.0
12
3