si3850adv Vishay, si3850adv Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
si3850adv
Manufacturer Part Number
si3850adv
Description
Complementary Mosfet Half-bridge N- And P-channel
Manufacturer
Vishay
Datasheet
1.SI3850ADV.pdf
(9 pages)
Si3850ADV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
6
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
10
8
6
4
2
0
0.0
0.0
0.0
I
D
V
= 1 A
GS
On-Resistance vs. Drain Current
0.5
= 2.5 V
0.5
0.5
V
DS
Output Characteristics
Q
V
g
– Drain-to-Source Voltage (V)
DS
I
1.0
D
– Total Gate Charge (nC)
Gate Charge
= 10 V
– Drain Current (A)
1.0
1.0
V
DS
1.5
= 5 V
1.5
1.5
V
V
GS
2.0
GS
V
3 V
3.5 V
2.5 V
= 15 V
= 3 V
GS
V
GS
= 5 thru 4 V
2.0
2.0
2 V
= 4.5 V
2.5
2.5
2.5
3.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
110
2.0
1.6
1.2
0.8
0.4
0.0
88
66
44
22
- 50
0
0
0
I
On-Resistance vs. Junction Temperature
D
- 25
= 0.5 A
V
4
1
T
V
DS
0
Transfer Characteristics
J
GS
– Junction Temperature (°C)
– Drain-to-Source Voltage (V)
C
– Gate-to-Source Voltage (V)
rss
25
Capacitance
8
2
25 °C
- 55 °C
50
S-60470-Rev. A, 27-Mar-06
C
Document Number: 73789
oss
12
75
3
V
GS
C
100
iss
T
= 3 V
C
V
GS
= 125 °C
16
4
= 4.5 V
125
150
20
5