si3850adv Vishay, si3850adv Datasheet - Page 4

• Manufacturer Part Number: si3850adv
• Description: Complementary Mosfet Half-bridge N- And P-channel
• Manufacturer: Vishay

Si3850ADV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
4
0.001
- 0.0
- 0.1
- 0.2
- 0.3
- 0.4
0.01
0.2
0.1
0.1
10
- 50
1
0.0
Source-Drain Diode Forward Voltage
- 25
0.3
V
SD
0
Threshold Voltage
T
– Source-to-Drain Voltage (V)
J
– Temperature (°C)
25
150 °C
0.6
50
0.9
25 °C
75
0.01
I
D
0.1
10
= 250 µA
*Limited by r
1
0.1
100
* V
1.2
I
D
GS
Single Pulse
= 5 mA
T
125
A
= 25 °C
DS(on)
V
minimum V
DS
150
1.5
– Drain-to-Source Voltage (V)
Safe Operating Area
1
GS
BV
DSS
at which r
Limited
DS(on)
10
is specified
1.5
1.2
0.9
0.6
0.3
0.0
24
18
12
30
0.001
6
0
100 ms
1 ms
10 ms
10 s
dc
1 s
0
On-Resistance vs. Gate-to-Source Voltage
100
V
1
0.01
GS
Single Pulse Power
– Gate-to-Source Voltage (V)
Time (sec)
2
25 °C
S-60470-Rev. A, 27-Mar-06
0.1
Document Number: 73789
3
125 °C
1
4
10
5