mrf5s21045 Freescale Semiconductor, Inc, mrf5s21045 Datasheet - Page 6

• Manufacturer Part Number: mrf5s21045
• Description: Rf Power Field Effect Transistors N-channel Enhancement-mode Lateral Mosfets
• Manufacturer: Freescale Semiconductor, Inc

MRF5S21045MR1 MRF5S21045MBR1
6
40
30
20
10
−25
−30
−35
−40
−45
−50
−55
−60
0
1
T
0.1
V
f1 = 2135 MHz, f2 = 2145 MHz
2 x W−CDMA, 10 MHz
@ 3.84 MHz Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
C
85_C
Figure 7. Intermodulation Distortion Products
DD
= −30_C
Figure 9. 2 - Carrier W - CDMA ACPR, IM3,
V
Two −Tone Measurements, Center Frequency = 2140 MHz
7th Order
DD
= 28 Vdc, I
5th Order
3rd Order
= 28 Vdc, P
Power Gain and Drain Efficiency
P
G
out
ps
DQ
, OUTPUT POWER (WATTS) AVG.
versus Output Power
= 500 mA
versus Tone Spacing
out
TWO −TONE SPACING (MHz)
= 45 W (PEP), I
1
10
−30_C
η
16
14
12
10
D
DQ
8
6
0
= 500 mA
Figure 11. Power Gain versus Output Power
25_C
10
10
85_C
25_C
TYPICAL CHARACTERISTICS
25_C
−30_C
V
85_C
−30_C
25_C
DD
20
P
85_C
out
= 12 V
, OUTPUT POWER (WATTS) CW
ACPR
IM3
16 V
100
30
100
−10
−20
−30
−40
−50
40
20 V
17
16
15
14
13
12
11
50
0.1
54
52
50
48
46
44
42
V
I
f = 2140 MHz
24 V
DQ
28
Figure 10. Power Gain and Drain Efficiency
DD
T
C
= 500 mA
= 28 Vdc
I
f = 2140 MHz
60
P1dB = 47.60 dBm (57.5 W)
DQ
= −30_C
25_C
85_C
Figure 8. Pulse CW Output Power versus
= 500 mA
28 V
30
P
70
versus CW Output Power
out
P3dB = 48.17 dBm (65.6 W)
32 V
, OUTPUT POWER (WATTS) CW
1
80
P
32
in
, INPUT POWER (dBm)
Input Power
V
Pulsed CW, 8 μsec(on), 1 msec(off)
Center Frequency = 2140 MHz
34
DD
= 28 Vdc, I
10
Freescale Semiconductor
36
−30_C
DQ
Ideal
= 500 mA
RF Device Data
85_C
25_C
38
Actual
100
60
50
40
30
20
10
0
40