mrf5s21045 Freescale Semiconductor, Inc, mrf5s21045 Datasheet - Page 2

• Manufacturer Part Number: mrf5s21045
• Description: Rf Power Field Effect Transistors N-channel Enhancement-mode Lateral Mosfets
• Manufacturer: Freescale Semiconductor, Inc

MRF5S21045MR1 MRF5S21045MBR1
2
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Forward Transconductance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
= 68 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 10 Vdc, I
DS
D
D
D
D
GS
GS
= 120 μAdc)
= 500 mAdc)
= 1.2 Adc)
= 1.2 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Test Methodology
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
Rating
V
V
ACPR
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
IM3
IRL
DSS
DSS
GSS
g
η
= 500 mA, P
3
rss
fs
ps
D
13.5
Min
Package Peak Temperature
out
0.2
—
—
—
—
—
24
—
—
—
2
2
= 10 W Avg., f1 = 2112.5 MHz,
14.5
25.5
260
Typ
- 37
- 39
- 12
3.8
3.2
0.9
—
—
—
—
—
1C (Minimum)
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
0.35
16.5
- 35
- 37
3.5
10
—
—
—
- 9
1
1
5
RF Device Data
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
°C
pF
%
S