mrf5s21045 Freescale Semiconductor, Inc, mrf5s21045 Datasheet - Page 5

• Manufacturer Part Number: mrf5s21045
• Description: Rf Power Field Effect Transistors N-channel Enhancement-mode Lateral Mosfets
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
17
16
15
14
13
12
11
1
V
f1 = 2135 MHz, f2 = 2145 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
DD
Figure 5. Two - Tone Power Gain versus
= 28 Vdc
350 mA
650 mA
500 mA
I
DQ
200 mA
= 800 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P
Output Power
10
15.2
14.8
14.6
14.4
14.2
13.8
13.6
13.4
14.8
14.6
14.4
14.2
13.8
13.6
13.4
13.2
15
14
14
13
2060
2060
ACPR
ACPR
IM3
IM3
G
2080
2080
IRL
ps
G
ps
IRL
η
η
D
D
2100
2100
V
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
DD
TYPICAL CHARACTERISTICS
100
V
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
= 28 Vdc, P
DD
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
2120
2120
= 28 Vdc, P
2140
2140
out
= 20 W (Avg.), I
out
= 10 W (Avg.), I
2160
2160
2180
2180
DQ
−10
−20
−30
−40
−50
−60
= 500 mA
DQ
1
Figure 6. Third Order Intermodulation Distortion
V
f1 = 2135 MHz, f2 = 2145 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
2200
2200
= 500 mA
DD
= 28 Vdc
2220
2220
P
32
28
24
20
16
46
42
38
34
30
−28
−32
−36
−40
−44
−18
−22
−26
−30
−34
out
I
DQ
MRF5S21045MR1 MRF5S21045MBR1
, OUTPUT POWER (WATTS) PEP
out
out
versus Output Power
= 200 mA
= 10 Watts
= 20 Watts
350 mA
−8
−11
−14
−17
−20
−10
−13
−16
−19
−22
10
650 mA
800 mA
500 mA
100
5