rf3145 RF Micro Devices, rf3145 Datasheet - Page 5

• Manufacturer Part Number: rf3145
• Description: Quad-band Gsm/edge/gsm850/dcs/pcs Power Amplifier Module Rf3145
• Manufacturer: RF Micro Devices

Rev A4 DS050919
GSM 900MHz Band
8PSK Mode
Operating Frequency Range
Output Power to Meet EVM and
Total Efficiency (PAE)
Gain
Gain Temperature Coefficient
EVM RMS
ACPR and Spectrum Mask
Output Noise Power
Forward Isolation
Second Harmonic
Third Harmonic
All other Non-Harmonic Spurious
Input Impedance
Input VSWR
Output Load VSWR
Output Load Ruggedness
Output Load Impedance
ACPR Spectrum
Parameter
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+28.5
+26.5
Min.
28.0
880
Specification
+29.0
-0.03
Typ.
29.5
28.0
10:1
2.0
-36
-60
-85
6:1
25
50
50
Max.
2.5:1
31.0
915
3.5
5.0
-34
-56
-63
-84
-25
-36
-7
-7
Unit
db/°
dBm
dBm
dBm
dBm
dBm
dBm
MHz
dBm
dBc
dBc
dBc
dB
dB
%
%
%
Ω
Ω
Temp=+25 °C, V
BandSelect=Low, V
V
Freq=880MHz to 915MHz, 25% Duty Cycle,
Pulse Width=1154μs
Temp=-20°C to +85°C, V
At P
Temp=-20°C to +85°C
Temp=-20°C to +85°C, V
P
P
<2.5:1VSWR, All angles
At 200kHz in 30kHz BW, P
At 400kHz in 30kHz BW, P
At 600kHz to 1800kHz in 30kHz BW,
P
RBW=100kHz, 935MHz to 960MHz,
P
TX Enable=0V, V
Over all power levels
Over all power levels
Over all power levels
Spurious<-36dBm, V
RBW=3MHz
Load impedance presented at RF OUT pad
RAMP
OUT
OUT
OUT
OUT
OUT,MAX
<28.5dBm
<26.5dBm, V
<28.5dBm
>+5dBm
=V
RAMP,MAX
, V
CC
=3.5V
CC
RAMP
Condition
, P
CC
=3.5V,
MODE
=3.2V to 4.8V,
IN
RAMP
RF3145
=+4dBm
= 0.2V, P
=High,
CC
CC
OUT
OUT
=0.2V to 1.6V,
=3.2V
=3.2V to 4.8V
<28.5dBm
<28.5dBm
IN
=+6dBm
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