rf3145 RF Micro Devices, rf3145 Datasheet - Page 3

• Manufacturer Part Number: rf3145
• Description: Quad-band Gsm/edge/gsm850/dcs/pcs Power Amplifier Module Rf3145
• Manufacturer: RF Micro Devices

Rev A4 DS050919
Power Control V
GSM850 GMSK Mode
Power Control “ON”
Power Control “OFF”
Power Control Range
V
V
Turn On/Off Time
GSM US 850MHz Band 8PSK
Mode
Operating Frequency Range
Output Power to Meet EVM and
Total Efficiency (PAE)
Gain
Gain Temperature Coefficient
EVM RMS
ACPR and Spectrum Mask
Output Noise Power
Forward Isolation
Second Harmonic
Third Harmonic
All other Non-Harmonic Spurious
Input Impedance
Input VSWR
Output Load VSWR
Output Load Ruggedness
Output Load Impedance
RAMP
RAMP
ACPR Spectrum
Input Capacitance
Input Current
Parameter
RAMP
,
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
+28.5
+26.5
Min.
28.0
824
Specification
+29.0
-0.03
Typ.
30.0
28.5
10:1
0.2
2.0
-36
-60
-85
-40
6:1
33
15
25
50
50
Max.
2.5:1
0.25
31.5
849
1.6
3.5
5.0
-34
-56
-63
-84
-30
-36
10
-7
-7
4
Unit
db/°
dBm
dBm
dBm
dBm
dBm
dBm
MHz
dBm
dBc
dBc
dBc
μS
dB
dB
dB
pF
μA
%
%
%
Ω
Ω
V
V
Max P
Minimum P
V
DC to 2MHz
V
V
Temp=+25 °C, V
V
Freq=824MHz to 849MHz, 25% Duty Cycle,
Pulse Width=1154μs
Temp=-20°C to +85°C, V
At P
Temp=-20°C to +85°C
Temp=-20°C to +85°C, V
P
P
<2.5:1VSWR, All angles
At 200kHz in 30kHz BW, P
At 400kHz in 30kHz BW, P
At 600kHz to 1800kHz in 30kHz BW,
P
RBW=100kHz, 869MHz to 894MHz,
P
TX Enable=0V, V
Over all power levels
Over all power levels
Over all power levels
Spurious<-36dBm, V
RBW=3MHz
Load impedance presented at RF OUT pad
RAMP
RAMP
RAMP
MODE
OUT
OUT
OUT
OUT
OUT,MAX
<28.5dBm
<26.5dBm, V
<28.5dBm
>+5dBm
OUT
=0.2V to 1.6V
=1.6V
=0V to 1.6V
=High, V
, Voltage supplied to the input
, V
OUT
CC
, Voltage supplied to the input.
RAMP
=3.5V
CC
RAMP
Condition
CC
=3.5V, BandSelect=Low,
=V
=3.2V to 4.8V,
RAMP
RF3145
= 0.2V, P
RAMP,MAX
CC
CC
OUT
OUT
=0.2V to 1.6V,
=3.2V
=3.2V to 4.8V
<28.5dBm
<28.5dBm
IN
,
=+6dBm
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